High Pressure Raman Study of Layered Semiconductor Tlgase2
Authors
S.H. Jabarov
Institute of Physics,, Baku, Azerbaijan
Joint Institute for Nuclear Research,, Dubna, Russia
V.B. Aliyeva
Institute of Physics,, Baku, Azerbaijan
T.G. Mammadov
Institute of Physics,, Baku, Azerbaijan
A.I. Mammadov
Institute of Physics,, Baku, Azerbaijan
S.E. Kichanov
Joint Institute for Nuclear Research,, Dubna, Russia
L.S. Dubrovinsky
Bayerisches Geoinstitut, University Bayreuth,, Bayreuth, Germany
S.S. Babayev
Institute of Physics,, Baku, Azerbaijan
E.G. Pashayeva
Institute of Physics,, Baku, Azerbaijan
N.T. Dang
Institute of Research and Development, Duy Tan University,, Da Nang, Vietnam
Language: English
Page range: 203 - 208
Submitted on: Jul 18, 2017
Accepted on: Mar 15, 2018
Published on: Jun 25, 2018
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
Related subjects:
© 2018 S.H. Jabarov, V.B. Aliyeva, T.G. Mammadov, A.I. Mammadov, S.E. Kichanov, L.S. Dubrovinsky, S.S. Babayev, E.G. Pashayeva, N.T. Dang, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.