High Pressure Raman Study of Layered Semiconductor Tlgase2 Cover

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High Pressure Raman Study of Layered Semiconductor Tlgase2

Materials Science-Poland

Volume 36 (2018): Issue 2 (June 2018)

By: S.H. Jabarov, V.B. Aliyeva, T.G. Mammadov, A.I. Mammadov, S.E. Kichanov, L.S. Dubrovinsky, S.S. Babayev, E.G. Pashayeva and N.T. Dang

Open Access

|Jun 2018

Authors

S.H. Jabarov

Institute of Physics,, Baku, Azerbaijan

Joint Institute for Nuclear Research,, Dubna, Russia

V.B. Aliyeva

Institute of Physics,, Baku, Azerbaijan

T.G. Mammadov

Institute of Physics,, Baku, Azerbaijan

A.I. Mammadov

Institute of Physics,, Baku, Azerbaijan

S.E. Kichanov

Joint Institute for Nuclear Research,, Dubna, Russia

L.S. Dubrovinsky

Bayerisches Geoinstitut, University Bayreuth,, Bayreuth, Germany

S.S. Babayev

Institute of Physics,, Baku, Azerbaijan

E.G. Pashayeva

Institute of Physics,, Baku, Azerbaijan

N.T. Dang

Institute of Research and Development, Duy Tan University,, Da Nang, Vietnam

DOI: https://doi.org/10.1515/msp-2018-0040 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331

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Language: English

Page range: 203 - 208

Submitted on: Jul 18, 2017

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Accepted on: Mar 15, 2018

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Published on: Jun 25, 2018

Published by: Wroclaw University of Science and Technology

In partnership with: Paradigm Publishing Services

Publication frequency: 4 issues per year

Keywords:

layered semiconductor,

Related subjects:

Materials sciences,

Materials sciences, other,

Functional and smart materials,

Materials characterization and properties

© 2018 S.H. Jabarov, V.B. Aliyeva, T.G. Mammadov, A.I. Mammadov, S.E. Kichanov, L.S. Dubrovinsky, S.S. Babayev, E.G. Pashayeva, N.T. Dang, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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