High Pressure Raman Study of Layered Semiconductor Tlgase2

Jabarov, S.H.; Aliyeva, V.B.; Mammadov, T.G.; Mammadov, A.I.; Kichanov, S.E.; Dubrovinsky, L.S.; Babayev, S.S.; Pashayeva, E.G.; Dang, N.T.

doi:10.1515/msp-2018-0040

Abstract

Raman spectroscopy measurements of a monoclinic layered semiconductor TlGaSe₂were performed in a pressure range up to 10.24 GPa. The pressure-induced first-order phase transition accompanied by reconstruction of the layer structure was observed at the pressure P ~ 0.9 GPa. The mode-Grüneisen parameters of intralayer bonds were calculated for TlGaSe₂. The contribution of thermal expansion to temperature changes of phonon frequencies was defined. The type of intralayer bonds and their pressure transformation were analyzed in layered TlGaSe₂. It was shown that the nature of intramolecular forces in molecular crystals and intralayer forces in layered GaS, GaSe and TlGaSe₂is similar

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High Pressure Raman Study of Layered Semiconductor Tlgase2

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