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Local temperature rise during the electron beam characterization Calculation model for the AlxGa1-xN at low dimensions

Materials Science-Poland
Volume 36 (2018): Issue 1 (March 2018)
By:
Open Access
|May 2018

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DOI: https://doi.org/10.1515/msp-2018-0034 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 51 - 55
Submitted on: Feb 28, 2017
Accepted on: Mar 18, 2018
Published on: May 18, 2018
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
semiconductors,
aluminum gallium nitride (AlGaN),
scanning electron microscope (SEM),
thermal effects
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2018 Lazhar Leghrib, Abdelkader Nouiri, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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