Skip to main content
Have a personal or library account? Click to login
Local temperature rise during the electron beam characterization Calculation model for the AlxGa1-xN at low dimensions Cover

Local temperature rise during the electron beam characterization Calculation model for the AlxGa1-xN at low dimensions

Materials Science-Poland
Volume 36 (2018): Issue 1 (March 2018)
By:  and    
Open Access
|May 2018
Authors

Authors

Lazhar Leghrib

LMSSEF Laboratory and LCAM Laboratory, University of Oum, El-Bouaghi, Algeria

Abdelkader Nouiri

nouiri_kader@yahoo.fr

LMSSEF Laboratory and LCAM Laboratory, University of Oum, El-Bouaghi, Algeria
DOI: https://doi.org/10.1515/msp-2018-0034 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Journal RSS Feed
Language: English
Page range: 51 - 55
Submitted on: Feb 28, 2017
Accepted on: Mar 18, 2018
Published on: May 18, 2018
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
semiconductors,
aluminum gallium nitride (AlGaN),
scanning electron microscope (SEM),
thermal effects
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2018 Lazhar Leghrib, Abdelkader Nouiri, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Volume 36 (2018): Issue 1 (March 2018)
Previous article
Next article