References
- [1] POLMAN A., KNIGHT M., GARNETT E.C., EHLER B., SINKE W.C., Science, 352 (2016), aad4424.
- [2] HIRST L.C., EKINS-DAUKES N.J., Prog. Photovolt. Res. Appl., 19 (2011), 286.10.1002/pip.1024
- [3] ROSS R.T., NOZIK A.J., J. Appl. Phys., 53 (1982), 3813.
- [4] KIRK A.P., FISCHETTI M.V., Phys. Rev. B, 86 (2012), 165206-1.10.1103/PhysRevB.86.165206
- [5] HIRST L.C., FUJII H., WANG Y., SIGIYAMA M., EKINS-DAUKES N.J., IEEE J. Photovolt., 4 (2014), 244.
- [6] RODIERE J., LOMBEZ L., LE CORRE A., DURAND O., GUILLEMOLES J.F., Appl. Phys. Lett., 106 (2015), 183901.
- [7] GRADAUSKAS J., ŠIRMULIS E., AŠMONTAS S., SUŽIED˙E LIS A., DASHEVSKY Z., KASIYAN V., Acta Phys. Pol. A, 119 (2011), 273.
- [8] AŠMONTAS S., GRADAUSKAS J., SUŽIED˙ELIS A., ŠIL˙E NAS A., ŠIRMULIS E., VAIˇC IKAUSKAS V., VAIˇCI¯U NAS V., ŽALYS O., FEDORENKO L., BULAT L., Opt. Quant. Electron., 48 (2016), 448.
- [9] BRISTOW A.D., ROTENBERG N., DRIEL VAN H.M., Appl. Phys. Lett., 90 (2007), 191104.
- [10] SPITZER W., FAN M.Y., Phys. Rev., 108 (1957), 268.
- [11] DARGYS A., KUNDROTAS J., Handbook of physical properties of Ge, Si, GaAs and InP, Science and Encyclopedia Publishers, Vilnius, 1994.