Photovoltage Formation Across Si P-N Junction Exposed to Laser Radiation
Authors
Steponas Ašmontas
Center for Physical Sciences and Technology,, Vilnius, Lithuania
Jonas Gradauskas
Center for Physical Sciences and Technology,, Vilnius, Lithuania
Algirdas Sužiedélis
Center for Physical Sciences and Technology,, Vilnius, Lithuania
Aldis Šilénas
Center for Physical Sciences and Technology,, Vilnius, Lithuania
Edmundas Širmulis
Center for Physical Sciences and Technology,, Vilnius, Lithuania
Vitas Švedas
Center for Physical Sciences and Technology,, Vilnius, Lithuania
Viktoras Vaičikauskas
Center for Physical Sciences and Technology,, Vilnius, Lithuania
Vytautas Vaičiūnas
Center for Physical Sciences and Technology,, Vilnius, Lithuania
Ovidijus Ž Žalys
Center for Physical Sciences and Technology,, Vilnius, Lithuania
Vitaliy Kostylyov
V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine,, Kyiv, Ukraine
Language: English
Page range: 337 - 340
Submitted on: Jul 14, 2017
Accepted on: Dec 4, 2017
Published on: Jun 25, 2018
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
Related subjects:
© 2018 Steponas Ašmontas, Jonas Gradauskas, Algirdas Sužiedélis, Aldis Šilénas, Edmundas Širmulis, Vitas Švedas, Viktoras Vaičikauskas, Vytautas Vaičiūnas, Ovidijus Ž Žalys, Vitaliy Kostylyov, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.