Multifractal characterization of epitaxial silicon carbide on silicon
Authors
Ştefan Ţălu
Technical University of Cluj-Napoca, Faculty of Mechanical Engineering, Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, 103-105 B-dul Muncii St.,, Cluj-Napoca, Romania
Sebastian Stach
University of Silesia, Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, ul. B˛edzi´nska 39, 41-205, Sosnowiec, Poland
Shikhgasan Ramazanov
SICLAB Limited liability company, 367030 Makhachkala, M., Yaragskogo, Russian Federation
Dagestan State University, Faculty of Physics, 367015, Makhachkala, Russian Federation
Dinara Sobola
Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00, Brno, Czech Republic
Guseyn Ramazanov
Dagestan State University, Faculty of Physics, 367015, Makhachkala, Russian Federation
Language: English
Page range: 539 - 547
Submitted on: Oct 13, 2016
Accepted on: Mar 28, 2017
Published on: Oct 31, 2017
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
Related subjects:
© 2017 Ştefan Ţălu, Sebastian Stach, Shikhgasan Ramazanov, Dinara Sobola, Guseyn Ramazanov, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.