Effect of electron beam injection on boron redistribution in silicon and oxide layer
By: Shiqiang Qin, Yi Tan, Jiayan Li, Dachuan Jiang, Shutao Wen and Shuang Shi
Authors
Shiqiang Qin
School of Materials Science and Engineering, Dalian University of Technology, Dalian, China
Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian, China
Yi Tan
School of Materials Science and Engineering, Dalian University of Technology, Dalian, China
Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian, China
Jiayan Li
School of Materials Science and Engineering, Dalian University of Technology, Dalian, China
Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian, China
Dachuan Jiang
School of Materials Science and Engineering, Dalian University of Technology, Dalian, China
Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian, China
Shutao Wen
School of Materials Science and Engineering, Dalian University of Technology, Dalian, China
Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian, China
Shuang Shi
School of Materials Science and Engineering, Dalian University of Technology, Dalian, China
Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian, China
Language: English
Page range: 14 - 17
Submitted on: Feb 29, 2016
Accepted on: Jan 15, 2017
Published on: Feb 24, 2017
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
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© 2017 Shiqiang Qin, Yi Tan, Jiayan Li, Dachuan Jiang, Shutao Wen, Shuang Shi, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.