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Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates Cover

Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates

Materials Science-Poland
Volume 34 (2016): Issue 4 (December 2016)
By: Łukasz Kosior,  Damian Radziewicz,  Iwona Zborowska-Lindert,  Andrzej Stafiniak,  Mikołaj Badura and  Beata Ściana  
Open Access
|Nov 2016
DOI: https://doi.org/10.1515/msp-2016-0103 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 872 - 880
Submitted on: Apr 25, 2016
Accepted on: Sep 6, 2016
Published on: Nov 6, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
epitaxy,
MOVPE,
patterned substrate,
wet etching,
mask material
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2016 Łukasz Kosior, Damian Radziewicz, Iwona Zborowska-Lindert, Andrzej Stafiniak, Mikołaj Badura, Beata Ściana, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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