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Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates Cover

Epitaxial regrowth of InP/InGaAs heterostructure on patterned, nonplanar substrates

Materials Science-Poland
Volume 34 (2016): Issue 4 (December 2016)
By: Łukasz Kosior,  Damian Radziewicz,  Iwona Zborowska-Lindert,  Andrzej Stafiniak,  Mikołaj Badura and  Beata Ściana  
Open Access
|Nov 2016

Figures & Tables

Technological steps of patterned substrate epitaxy.
Technological steps of patterned substrate epitaxy.
Schematic view of the mask film and its arrangement in relation to crystallographic directions.
Schematic view of the mask film and its arrangement in relation to crystallographic directions.
Schematic view of structure applied in the regrowth process.
Schematic view of structure applied in the regrowth process.
SEM images of substrate after etching in 1HCl:3H3PO4 solution with photoresist as a mask (a) ∼2 µm etching depth, (b) deep etching with photoresist mask already removed.
SEM images of substrate after etching in 1HCl:3H3PO4 solution with photoresist as a mask (a) ∼2 µm etching depth, (b) deep etching with photoresist mask already removed.
SEM images of surface after etching in 1HCl:3H3PO4 with Si3N4 as a mask material (a) ∼2 µm etching depth, (b) ∼10 µm etching depth.
SEM images of surface after etching in 1HCl:3H3PO4 with Si3N4 as a mask material (a) ∼2 µm etching depth, (b) ∼10 µm etching depth.
WLI measurement result after 5 minute etching in 1HCl:1CH3COOH:1H2O2 solution.
WLI measurement result after 5 minute etching in 1HCl:1CH3COOH:1H2O2 solution.
SEM images of an InP substrate etched in 1HCl:1CH3COOH:1H2O2 (a) general view, (b) measured thickness of the etching.
SEM images of an InP substrate etched in 1HCl:1CH3COOH:1H2O2 (a) general view, (b) measured thickness of the etching.
WLI measurement result after 5 minute etching in 1HCl:1CH3COOH:1H2O2 solution.
WLI measurement result after 5 minute etching in 1HCl:1CH3COOH:1H2O2 solution.
SEM images of an InP substrate etched in 1HCl:1H2O (a) general view with visible gaps, (b) part of ‘cross’ mask, (c) part of rounded mesa (d) slopes view.
SEM images of an InP substrate etched in 1HCl:1H2O (a) general view with visible gaps, (b) part of ‘cross’ mask, (c) part of rounded mesa (d) slopes view.
Profilometer measurement results of 5 minute etching in 1HCl:3H3PO4 mixture.
Profilometer measurement results of 5 minute etching in 1HCl:3H3PO4 mixture.
SEM images of an InP substrate etched in 1HCl:3H3PO4 (a) slope view, (b) ‘cross’ mask view, (c) slope in 11¯0$\left\langle {1\;\bar 1\;0} \right\rangle$ (d) dimensions of 11¯0$\left\langle {1\;\bar 1\;0} \right\rangle$ slope.
SEM images of an InP substrate etched in 1HCl:3H3PO4 (a) slope view, (b) ‘cross’ mask view, (c) slope in 11¯0$\left\langle {1\;\bar 1\;0} \right\rangle$ (d) dimensions of 11¯0$\left\langle {1\;\bar 1\;0} \right\rangle$ slope.
Images taken with an optical microscope using a phase contrast technique (both from the same sample) (a) shallow etching site and (b) deep etching site.
Images taken with an optical microscope using a phase contrast technique (both from the same sample) (a) shallow etching site and (b) deep etching site.
Optical microscope images of P82 surface (a) dark field method and (b) phase contrast.
Optical microscope images of P82 surface (a) dark field method and (b) phase contrast.
SEM image of A sample cross-section.
SEM image of A sample cross-section.
Panoramic view of round shape mesa slope of sample A.
Panoramic view of round shape mesa slope of sample A.
SEM top view images of A sample.
SEM top view images of A sample.
SEM cross-section images of B2 sample.
SEM cross-section images of B2 sample.
SEM images of the same area in (a) B1 and (b) B2 samples.
SEM images of the same area in (a) B1 and (b) B2 samples.

Methods for the preparation of substrates for the epitaxial regrowth_

SampleMaskEtching solution
APhotoresist1HCl: 1H3PO4
B1
B2SiN
DOI: https://doi.org/10.1515/msp-2016-0103 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 872 - 880
Submitted on: Apr 25, 2016
Accepted on: Sep 6, 2016
Published on: Nov 6, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
epitaxy,
MOVPE,
patterned substrate,
wet etching,
mask material
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2016 Łukasz Kosior, Damian Radziewicz, Iwona Zborowska-Lindert, Andrzej Stafiniak, Mikołaj Badura, Beata Ściana, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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