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Compositional analysis of silicon oxide/silicon nitride thin films Cover

Compositional analysis of silicon oxide/silicon nitride thin films

Open Access
|Jun 2016

Figures & Tables

Fig. 1

Depth profiles of Si, O, N and H in an ON structure annealed at 700 °C.

Fig. 2

SIMS depth distribution of oxygen concentration for samples annealed at different temperatures.

Fig. 3

SIMS depth distributions of Si/N ratio on ON structure for as-deposited and annealed at: 500 °C, 700 °C, 900 °C and 1000 °C.

Fig. 4

SIMS depth distributions of O/N ratio for as deposited and annealed films at temperatures 500 °C, 700 °C, 900 °C and 1000 °C.

Fig. 5

Typical RBS spectrum of ON structure recorded with He+2 ions at 2 MeV. Simulation by SIMNRA is given for comparison. Chemical symbol arrows are given to show the signal of each element located at the film surface.

Fig. 6

First derivative AES survey spectrum of oxide/nitride film obtained after dry oxidation of SiNx and annealed at 700 °C during 30 min.

Fig. 7

The EDX spectrum of a typical oxide/nitride film with similar amounts of nitrogen and oxygen. Electron beam energy: 5 keV and the detection take-off angle 35°.

Fig. 8

Correlation between O/Si and N/Si with annealing temperature determined by EDX in oxide/nitride film oxidized at 950 °C during 3 hours. The SiNx films were deposited by PECVD with R = 6.
DOI: https://doi.org/10.1515/msp-2016-0057 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 315 - 321
Submitted on: Jun 23, 2015
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Accepted on: Apr 28, 2016
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Published on: Jun 10, 2016
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2016 Samir Meziani, Abderrahmane Moussi, Linda Mahiou, Ratiba Outemzabet, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.