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Compositional analysis of silicon oxide/silicon nitride thin films

Materials Science-Poland
Volume 34 (2016): Issue 2 (June 2016)
By:
Open Access
|Jun 2016

Figures & Tables

Fig. 1

Depth profiles of Si, O, N and H in an ON structure annealed at 700 °C.
Depth profiles of Si, O, N and H in an ON structure annealed at 700 °C.

Fig. 2

SIMS depth distribution of oxygen concentration for samples annealed at different temperatures.
SIMS depth distribution of oxygen concentration for samples annealed at different temperatures.

Fig. 3

SIMS depth distributions of Si/N ratio on ON structure for as-deposited and annealed at: 500 °C, 700 °C, 900 °C and 1000 °C.
SIMS depth distributions of Si/N ratio on ON structure for as-deposited and annealed at: 500 °C, 700 °C, 900 °C and 1000 °C.

Fig. 4

SIMS depth distributions of O/N ratio for as deposited and annealed films at temperatures 500 °C, 700 °C, 900 °C and 1000 °C.
SIMS depth distributions of O/N ratio for as deposited and annealed films at temperatures 500 °C, 700 °C, 900 °C and 1000 °C.

Fig. 5

Typical RBS spectrum of ON structure recorded with He+2 ions at 2 MeV. Simulation by SIMNRA is given for comparison. Chemical symbol arrows are given to show the signal of each element located at the film surface.
Typical RBS spectrum of ON structure recorded with He+2 ions at 2 MeV. Simulation by SIMNRA is given for comparison. Chemical symbol arrows are given to show the signal of each element located at the film surface.

Fig. 6

First derivative AES survey spectrum of oxide/nitride film obtained after dry oxidation of SiNx and annealed at 700 °C during 30 min.
First derivative AES survey spectrum of oxide/nitride film obtained after dry oxidation of SiNx and annealed at 700 °C during 30 min.

Fig. 7

The EDX spectrum of a typical oxide/nitride film with similar amounts of nitrogen and oxygen. Electron beam energy: 5 keV and the detection take-off angle 35°.
The EDX spectrum of a typical oxide/nitride film with similar amounts of nitrogen and oxygen. Electron beam energy: 5 keV and the detection take-off angle 35°.

Fig. 8

Correlation between O/Si and N/Si with annealing temperature determined by EDX in oxide/nitride film oxidized at 950 °C during 3 hours. The SiNx films were deposited by PECVD with R = 6.
Correlation between O/Si and N/Si with annealing temperature determined by EDX in oxide/nitride film oxidized at 950 °C during 3 hours. The SiNx films were deposited by PECVD with R = 6.
DOI: https://doi.org/10.1515/msp-2016-0057 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 315 - 321
Submitted on: Jun 23, 2015
Accepted on: Apr 28, 2016
Published on: Jun 10, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
oxidation,
PECVD,
annealing temperature,
elemental analysis
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2016 Samir Meziani, Abderrahmane Moussi, Linda Mahiou, Ratiba Outemzabet, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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