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Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications Cover

Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications

Materials Science-Poland
Volume 33 (2015): Issue 4 (December 2015)
By: Piotr Firek,  Michał Wáskiewicz,  Bartłomiej Stonio and  Jan Szmidt  
Open Access
|Jan 2016

Authors

Piotr Firek

P.Firek@elka.pw.edu.pl

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw, Poland

Michał Wáskiewicz

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw, Poland

Bartłomiej Stonio

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw, Poland

Jan Szmidt

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw, Poland
DOI: https://doi.org/10.1515/msp-2015-0095 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 669 - 676
Submitted on: Jan 13, 2014
|
Accepted on: Jun 16, 2015
|
Published on: Jan 6, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
ISFET/MISFET technology,
AlN,
aluminum nitride,
magnetron sputtering
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2016 Piotr Firek, Michał Wáskiewicz, Bartłomiej Stonio, Jan Szmidt, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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