Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications

Piotr Firek; Michał Wáskiewicz; Bartłomiej Stonio; Jan Szmidt

doi:10.1515/msp-2015-0095

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Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications

Materials Science-Poland

Volume 33 (2015): Issue 4 (December 2015)

By: Piotr Firek, Michał Wáskiewicz, Bartłomiej Stonio and Jan Szmidt

Open Access

|Jan 2016

Abstract

This work presents the investigations of AlN thin films deposited on Si substrates by means of magnetron sputtering. Nine different sputtering processes were performed. Based on obtained results, the tenth process was prepared and performed (for future ISFET structures manufacturing). Round aluminum (Al) electrodes were evaporated on the top of deposited layers. The MIS capacitor structures enabled a subsequent electrical characterization of the AlN films by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. Based on these results, the main parameters of investigated layers were obtained. Moreover, the paper describes the technology of fabrication and electrical characterization of ISFET transistors and possibility of their application as ion sensors.

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Articles in this issue

DOI: https://doi.org/10.1515/msp-2015-0095 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331

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Language: English

Page range: 669 - 676

Submitted on: Jan 13, 2014

Accepted on: Jun 16, 2015

Published on: Jan 6, 2016

Published by: Wroclaw University of Science and Technology

In partnership with: Paradigm Publishing Services

Publication frequency: 4 issues per year

Keywords:

ISFET/MISFET technology,

AlN,

aluminum nitride,

magnetron sputtering

Related subjects:

Materials sciences,

Materials sciences, other,

Nanomaterials,

Functional and smart materials,

Materials characterization and properties

© 2016 Piotr Firek, Michał Wáskiewicz, Bartłomiej Stonio, Jan Szmidt, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 33 (2015): Issue 4 (December 2015)