Growth of intermetallic compound between indium-based thermal interface material and copper substrate: molecular dynamics simulations

Tomasz Falat; Bartosz Platek

doi:10.1515/msp-2015-0054

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Growth of intermetallic compound between indium-based thermal interface material and copper substrate: molecular dynamics simulations

Materials Science-Poland

Volume 33 (2015): Issue 2 (June 2015)

By: Tomasz Falat and Bartosz Platek

Open Access

|Jul 2015

Abstract

The diffusion phenomenon occurring between copper and indium was investigated by molecular dynamics simulations. The calculations were carried out in various temperatures in aging domain with the use of the commercially available Materials Studio v.6. software. The results showed that the intermetallic compound (IMC) growth followed the parabolic law, which indicated this growth to be mainly controlled by volume diffusion. The growth activation energy was estimated at 7.48 kJ · mol^-1.

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DOI: https://doi.org/10.1515/msp-2015-0054 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331

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Language: English

Page range: 445 - 450

Submitted on: Jan 30, 2014

Accepted on: Feb 27, 2015

Published on: Jul 11, 2015

Published by: Wroclaw University of Science and Technology

In partnership with: Paradigm Publishing Services

Publication frequency: 4 issues per year

Keywords:

thermal interface material (TIM),

molecular dynamics simulations (MD),

diffusivity,

intermetallic compound (IMC)

Related subjects:

Materials sciences,

Materials sciences, other,

Nanomaterials,

Functional and smart materials,

Materials characterization and properties

© 2015 Tomasz Falat, Bartosz Platek, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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