Growth of intermetallic compound between indium-based thermal interface material and copper substrate: molecular dynamics simulations
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Abstract
The diffusion phenomenon occurring between copper and indium was investigated by molecular dynamics simulations. The calculations were carried out in various temperatures in aging domain with the use of the commercially available Materials Studio v.6. software. The results showed that the intermetallic compound (IMC) growth followed the parabolic law, which indicated this growth to be mainly controlled by volume diffusion. The growth activation energy was estimated at 7.48 kJ · mol-1.
Language: English
Page range: 445 - 450
Submitted on: Jan 30, 2014
Accepted on: Feb 27, 2015
Published on: Jul 11, 2015
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
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© 2015 Tomasz Falat, Bartosz Platek, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.