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Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications Cover

Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

Journal of Electrical Engineering
Volume 67 (2016): Issue 5 (September 2016)
By: Arpád Kósa,  Miroslav Mikolášek,  Ľubica Stuchlíková,  Ladislav Harmatha,  Wojciech Dawidowski,  Beata Ściana and  Marek Tłaczała  
Open Access
|Nov 2016
DOI: https://doi.org/10.1515/jee-2016-0054 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 377 - 382
Submitted on: Jun 14, 2016
Published on: Nov 2, 2016
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
solar cell,
GaAs concentrator solar cell,
– measurement,
DLTFS,
defects
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2016 Arpád Kósa, Miroslav Mikolášek, Ľubica Stuchlíková, Ladislav Harmatha, Wojciech Dawidowski, Beata Ściana, Marek Tłaczała, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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