Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

Kósa, Arpád; Mikolášek, Miroslav; Stuchlíková, Ľubica; Harmatha, Ladislav; Dawidowski, Wojciech; Ściana, Beata; Tłaczała, Marek

doi:10.1515/jee-2016-0054

Abstract

This paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and dark current-voltage (I–V) and Deep Level Transient Fourier Spectroscopy (DLTFS) methods. The conversion efficiency and open-circuit voltage were determined from I–V measurement at 1 and 20× sun light concentrations. Three electron like defects TA_n1, TA_n2, TD_n and one hole like defect TBp obtained by DLTFS measurements were confirmed. The origin of these defect states was stated as native GaAs impurities.

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Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

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