Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

Arpád Kósa; Miroslav Mikolášek; Ľubica Stuchlíková; Ladislav Harmatha; Wojciech Dawidowski; Beata Ściana; Marek Tłaczała

doi:10.1515/jee-2016-0054

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Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

Journal of Electrical Engineering

Volume 67 (2016): Issue 5 (September 2016)

By: Arpád Kósa, Miroslav Mikolášek, Ľubica Stuchlíková, Ladislav Harmatha, Wojciech Dawidowski, Beata Ściana and Marek Tłaczała

Open Access

|Nov 2016

Abstract

This paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and dark current-voltage (I–V) and Deep Level Transient Fourier Spectroscopy (DLTFS) methods. The conversion efficiency and open-circuit voltage were determined from I–V measurement at 1 and 20× sun light concentrations. Three electron like defects TA_n1, TA_n2, TD_n and one hole like defect TBp obtained by DLTFS measurements were confirmed. The origin of these defect states was stated as native GaAs impurities.

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Articles in this issue

DOI: https://doi.org/10.1515/jee-2016-0054 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632

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Language: English

Page range: 377 - 382

Submitted on: Jun 14, 2016

Published on: Nov 2, 2016

Published by: Slovak University of Technology in Bratislava

In partnership with: Paradigm Publishing Services

Publication frequency: 6 issues per year

Keywords:

solar cell,

GaAs concentrator solar cell,

– measurement,

DLTFS,

defects

Related subjects:

Engineering,

Introductions and overviews,

Engineering, other

© 2016 Arpád Kósa, Miroslav Mikolášek, Ľubica Stuchlíková, Ladislav Harmatha, Wojciech Dawidowski, Beata Ściana, Marek Tłaczała, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 67 (2016): Issue 5 (September 2016)