Contribution to the Quantitative Analysis of Ternary Alloys of Group III-Nitrides by Auger Spectroscopy
Liday, Jozef, Ecke, Gernod, Baumann, Tim, Vogrinčič, Peter, Breza, Juraj
Improving the ohmic properties of contacts to P–GaN by adding p–type dopants into the metallization layer
Liday, Jozef, Vogrinčič, Peter, Vincze, Andrej, Breza, Juraj, Hotový, Ivan
Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes
Liday, Jozef, Vogrinčič, Peter, Vretenár, Viliam, Kotlár, Mário, Marton, Marián, Reháček, Vlastimil
Application Of Carbon Nanotubes And Reduced Graphene Oxide Layers For Ohmic Contacts To p–GaN
Liday, Jozef, Vogrinčič, Peter, Vretenár, Viliam, Kotlár, Mário, Marton, Marián, Řeháček, Vlastimil
Some Aspects of Quantitative Analysis of Ternary Alloys of Group III-Nitrides by Auger Electron Spectroscopy
Liday, Jozef, Vogrinčič, Peter, Ecke, Gernod
Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers
Liday, Jozef, Vogrinčič, Peter, Vretenár, Viliam, Hotový, Ivan, Kotlár, Mário, Marton, Marián, Řeháček, Vlastimil
Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization
Liday, Jozef, Vogrinčič, Peter, Hotový, Ivan, Bonanni, Alberta, Sitter, Helmut, Lalinský, Tibor, Vanko, Gabriel, Řeháček, Vlastimil, Breza, Juraj, Ecke, Gernot
Ohmic Contacts to p-GaN Using Au/Ni-Zn-O Metallization
Liday, Jozef, Vogrinčič, Peter, Hotový, Ivan, Sitter, Helmut, Bonanni, Alberta