References
- [1] RĄBKOWSKI J., PEFTITSIS D., NEE H.-P., Parallel-Operation of Discrete SiC BJTs in a 6-kW/250-kHz DC/DC Boost Converter, IEEE Trans. on Power Electron., 2014, Vol. 29, No. 5, 2482-2491.
- [2] LI X., ZHANG L., GUO S., LEI Y., HUANG A.Q., ZHANG B., Understanding switching losses in SiC MOSFET: Toward lossless switching, Wide Bandgap Power Devices and Applications (WiPDA), IEEE 3rd Workshop, Blacksburg, 2015, 257-262.
- [3] HUGHES B. et al., Normally-off GaN switching 400V in 1.4ns using an ultra-low resistance and inductance gate drive, Wide Bandgap Power Devices and Applications (WiPDA), IEEE Workshop, Columbus, 2013, 76-79.
- [4] ZHANG Z., WANG F., TOLBERT L.M., BLALOCK B.J., COSTINETT D.J., Active gate driver for fast switching and cross-talk suppression of SiC devices in a phase-leg configuration, Applied Power Electronics Conference and Exposition (APEC), IEEE, Charlotte, 2015, 774-781.
- [5] ALIGA B.J., Fundamentals of Power Semiconductor Devices, Springer, New York, USA, 2008.
- [6] INFINEON, Datasheet information on power MOSFET IPW60R070C6. Available: http: //www.infineon.com.
- [7] GRZEJSZCZAK P., NOWAK M., BARLIK R., Analytical description of the switching losses in high voltage MOSFET H-bridge, Electrical Review, 2015, Vol. 90, No. 11, 74-77, (in Polish).
- [8] CHEN Z., BOROYEVICH D., BURGOS R., Experimental Parametric Study of the Parasitic Inductance Influence on MOSFET Switching Characteristics, Proc. of the Int. Power Electronics Confer., Singapur 2010, 164-169.
- [9] XIAO C., CHEN G., ODENDAAL W.G.H., Overview of power loss measurement techniques in power electronics systems, IEEE Trans. on Industrial Application, 2007, Vol. 43, No. 3, 657-664.
- [10] GRZEJSZCZAK P., Methodology for determining power losses in switching devices of dual active bridge converter with taking into account the thermal effects, Ph.D. Thesis, Warsaw University of Technology, Warszawa 2014, (in Polish).