The Description of Turn-Off Process and Evaluation of Switching Power Losses in the Ultra Fast Power Mosfet

Grzejszczak, Piotr; Barlik, Roman

doi:10.5277/ped160104

Abstract

The article presents an analytical description of the turn-off process of the power MOSFET suitable for use in high-frequency converters. The purpose of this description is to explain the dynamic phenomena occurring inside the transistor and contributing to the switching power losses. The detailed description uses the results of simulation studies carried out using a very precise model of the CoolMOS transistor manufactured by Infineon (IPW60R070C6). The theoretical analysis has been verified in experimental measurements of power dissipated during turn-off transient of MOSFET operating in a full bridge converter with switching frequency of 100 kHz. To estimate these switching losses an original thermovision method based on the measurement of heat dissipated in the power semiconductor switches has been used. The obtained results confirm the correctness of the conclusions drawn from the theoretical analysis presented in this paper.

References

[1] RĄBKOWSKI J., PEFTITSIS D., NEE H.-P., Parallel-Operation of Discrete SiC BJTs in a 6-kW/250-kHz DC/DC Boost Converter, IEEE Trans. on Power Electron., 2014, Vol. 29, No. 5, 2482-2491.10.1109/TPEL.2013.2283083
Search in Google Scholar Back to article
[2] LI X., ZHANG L., GUO S., LEI Y., HUANG A.Q., ZHANG B., Understanding switching losses in SiC MOSFET: Toward lossless switching, Wide Bandgap Power Devices and Applications (WiPDA), IEEE 3rd Workshop, Blacksburg, 2015, 257-262.10.1109/WiPDA.2015.7369295
Search in Google Scholar Back to article
[3] HUGHES B. et al., Normally-off GaN switching 400V in 1.4ns using an ultra-low resistance and inductance gate drive, Wide Bandgap Power Devices and Applications (WiPDA), IEEE Workshop, Columbus, 2013, 76-79.10.1109/WiPDA.2013.6695566
Search in Google Scholar Back to article
[4] ZHANG Z., WANG F., TOLBERT L.M., BLALOCK B.J., COSTINETT D.J., Active gate driver for fast switching and cross-talk suppression of SiC devices in a phase-leg configuration, Applied Power Electronics Conference and Exposition (APEC), IEEE, Charlotte, 2015, 774-781.10.1109/APEC.2015.7104437
Search in Google Scholar Back to article
[5] ALIGA B.J., Fundamentals of Power Semiconductor Devices, Springer, New York, USA, 2008.10.1007/978-0-387-47314-7
Search in Google Scholar Back to article
[6] INFINEON, Datasheet information on power MOSFET IPW60R070C6. Available: http: //www.infineon.com.
Search in Google Scholar Back to article
[7] GRZEJSZCZAK P., NOWAK M., BARLIK R., Analytical description of the switching losses in high voltage MOSFET H-bridge, Electrical Review, 2015, Vol. 90, No. 11, 74-77, (in Polish).
Search in Google Scholar Back to article
[8] CHEN Z., BOROYEVICH D., BURGOS R., Experimental Parametric Study of the Parasitic Inductance Influence on MOSFET Switching Characteristics, Proc. of the Int. Power Electronics Confer., Singapur 2010, 164-169.10.1109/IPEC.2010.5543851
Search in Google Scholar Back to article
[9] XIAO C., CHEN G., ODENDAAL W.G.H., Overview of power loss measurement techniques in power electronics systems, IEEE Trans. on Industrial Application, 2007, Vol. 43, No. 3, 657-664.10.1109/TIA.2007.895730
Search in Google Scholar Back to article
[10] GRZEJSZCZAK P., Methodology for determining power losses in switching devices of dual active bridge converter with taking into account the thermal effects, Ph.D. Thesis, Warsaw University of Technology, Warszawa 2014, (in Polish).
Search in Google Scholar Back to article

The Description of Turn-Off Process and Evaluation of Switching Power Losses in the Ultra Fast Power Mosfet

Abstract

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