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Improving the ohmic properties of contacts to P–GaN by adding p–type dopants into the metallization layer Cover

Improving the ohmic properties of contacts to P–GaN by adding p–type dopants into the metallization layer

Journal of Electrical Engineering
Volume 63 (2012): Issue 6 (November 2012)
By: ,  ,  ,   and    
Open Access
|Dec 2012
References

References

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DOI: https://doi.org/10.2478/v10187-012-0059-x | Journal eISSN: 1339-309X (formerly 1335-3632) | Journal ISSN: 1335-3632
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Language: English
Page range: 397 - 401
Published on: Dec 29, 2012
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Keywords:
p-GaN,
ohmic contact,
contact resistivity,
Au/Ni-Mg(Zn)-O/p-GaN contact structure,
annealing,
Auger electron spectra,
secondary ion mass spectra
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2012 Jozef Liday, Peter Vogrinčič, Andrej Vincze, Juraj Breza, Ivan Hotový, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.

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