Improving the ohmic properties of contacts to P–GaN by adding p–type dopants into the metallization layer
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|Dec 2012Download Article
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Language: English
Page range: 397 - 401
Published on: Dec 29, 2012
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
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© 2012 Jozef Liday, Peter Vogrinčič, Andrej Vincze, Juraj Breza, Ivan Hotový, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.