Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films

Shiman, O.; Gerbreders, V.; Sledevskis, E.; Bulanovs, A.

doi:10.2478/v10047-012-0010-8

Abstract

The paper is focused on the development of an in situ real-time method for studying the process of wet chemical etching of thin films. The results of studies demonstrate the adequate etching selectivity for all thin film Sb_xSe_100-x (x = 0, 20, 40, 50, 100) compositions under consideration. Different etching rates for the as-deposited and laser exposed areas were found to depend on the sample composition. The highest achieved etching rate was 1.8 nm/s for Sb₄₀Se₆₀ samples.

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Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films

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