Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films

O. Shiman; V. Gerbreders; E. Sledevskis; A. Bulanovs

doi:10.2478/v10047-012-0010-8

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Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films

Latvian Journal of Physics and Technical Sciences

Volume 49 (2012): Issue 2 (April 2012)

By: O. Shiman, V. Gerbreders, E. Sledevskis and A. Bulanovs

Open Access

|May 2012

Abstract

The paper is focused on the development of an in situ real-time method for studying the process of wet chemical etching of thin films. The results of studies demonstrate the adequate etching selectivity for all thin film Sb_xSe_100-x (x = 0, 20, 40, 50, 100) compositions under consideration. Different etching rates for the as-deposited and laser exposed areas were found to depend on the sample composition. The highest achieved etching rate was 1.8 nm/s for Sb₄₀Se₆₀ samples.

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Articles in this issue

DOI: https://doi.org/10.2478/v10047-012-0010-8 | Journal eISSN: 2255-8896 | Journal ISSN: 0868-8257

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Language: English

Page range: 45 - 50

Published on: May 18, 2012

Published by: Institute of Physical Energetics

In partnership with: Paradigm Publishing Services

Publication frequency: 6 issues per year

Keywords:

chalcogenide thin film,

amorphous and crystalline phases,

etching rate

Related subjects:

Physics,

Technical and applied physics

© 2012 O. Shiman, V. Gerbreders, E. Sledevskis, A. Bulanovs, published by Institute of Physical Energetics
This work is licensed under the Creative Commons License.

Volume 49 (2012): Issue 2 (April 2012)