Have a personal or library account? Click to login
Deep levels in GaN studied by deep level transient spectroscopy and Laplace transform deep-level spectroscopy Cover

Deep levels in GaN studied by deep level transient spectroscopy and Laplace transform deep-level spectroscopy

Open Access
|Dec 2013

References

  1. [1] Hacke P., Detchprohm T., Hiramatsu K., Sawaki N., J. Appl. Phys., 76 (1994), 304. http://dx.doi.org/10.1063/1.35714410.1063/1.357144
  2. [2] Jenkins D. W., Dow J. D., Phys. Rev. B, 39 (1989), 3317. http://dx.doi.org/10.1103/PhysRevB.39.331710.1103/PhysRevB.39.3317
  3. [3] Fang Z-Q., Look D. C., Kim W., Fan Z., Botchkarev A., Morkoc H., Appl. Phys. Lett., 72 (1998), 2277. http://dx.doi.org/10.1063/1.12127410.1063/1.121274
  4. [4] Morkoc H., Materials Science and Engineering R, 33 (2001), 135. http://dx.doi.org/10.1016/S0927-796X(01)00031-610.1016/S0927-796X(01)00031-6
  5. [5] Miskufova M., Computational studies of III — V nitride Semiconductors, The Chemistry department of University College London (UCL), December 19, 2011.
  6. [6] Cho H. K., J. Appl. Phys., 94 (2003), 1485. http://dx.doi.org/10.1063/1.158698110.1063/1.1586981
  7. [7] Rhoderic E. H., Wiliams R. H., Metal Semiconductor Contact, 2nd ed., Clarenden, Oxford, 1988.
  8. [8] Sze S. M., Kwok K. Ng., Physics of Semiconductor Devices, 3rd ed., J. Wiley and Sons, Inc., Hoboken, New Jersey, 2007.
  9. [9] Blood P., Orton J. W., The electrical characterization of semiconductors: Majority carriers and electron states, Academic Press, 1992.
  10. [10] Dyba P., Placzek-Popko E., Zielony E., Gumienny Z., Grzanka S., Czarnecki R., Suski T., Acta Phys. Pol. A, 119 (2011), 669. 10.12693/APhysPolA.119.669
  11. [11] Wang D., Yu L. S., Lau S. S., Yu E. T., Appl. Phys. Lett., 72 (1998), 1211. http://dx.doi.org/10.1063/1.12101610.1063/1.121016
  12. [12] Placzek-popko E., Trzmiel J., Zielony E., Grzanka S., Czernecki R., Suski T., Physica B, 404 (2009), 4889. http://dx.doi.org/10.1016/j.physb.2009.08.23710.1016/j.physb.2009.08.237
  13. [13] Haase D., Schmid M., Kurner W., Dornen A., Harle V., Scholz F., Burkard M., Schweizer H., Appl. Phys. Lett., 69 (1996), 2525. http://dx.doi.org/10.1063/1.11772710.1063/1.117727
  14. [14] Gotz W., Johnson N.M., Amano H., Akasaki I., Appl. Phys. Lett., 65 (1994), 463. http://dx.doi.org/10.1063/1.11233710.1063/1.112337
  15. [15] Fang Z.-Q., Look D.C., Visconti P., Wang D.F., Lu C.Z., Yun F., Morkoc H., Appl. Phys. Lett., 78 (2001), 2178. http://dx.doi.org/10.1063/1.136127310.1063/1.1361273
  16. [16] Umana-membreno G.A., Dell J.M., Nener B.D., Parish G., Faraone L., Mishra U.K., IEEE Trans. Electron. Dev., 50 (2003), 2326. http://dx.doi.org/10.1109/TED.2003.82012210.1109/TED.2003.820122
  17. [17] Wua L., Meyera W.E., Auret F.D., M. HAYES, Physica B, 340–342 (2003), 475. http://dx.doi.org/10.1016/j.physb.2003.09.03710.1016/j.physb.2003.09.037
  18. [18] Tokuda Y., Matuoka Y., Yoshida K., Ueda H., Phys. Stat. Sol. (C), 4 (2007), 2568. http://dx.doi.org/10.1002/pssc.20067470410.1002/pssc.200674704
DOI: https://doi.org/10.2478/s13536-013-0138-0 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 572 - 576
Published on: Dec 15, 2013
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:

© 2013 Paulina Kamyczek, Ewa Placzek-Popko, Eunika Zielony, Zbigniew Zytkiewicz, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.