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Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots Cover

Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots

Open Access
|Apr 2013

References

  1. [1] Braga D., Horowitz G., Adv. Mater. 21/14–15 (2009), 1473. http://dx.doi.org/10.1002/adma.20080273310.1002/adma.200802733
  2. [2] Wen Y.G., Liu Y.Q., Guo Y.L., Yu G., Hu W.P., Chem. Rev. 111/5 (2011), 3358. http://dx.doi.org/10.1021/cr100190410.1021/cr1001904
  3. [3] Ortiz R.P., Facchetti A., Marks T.J., Chem. Rev. 110/1 (2010) 205. http://dx.doi.org/10.1021/cr900127510.1021/cr9001275
  4. [4] Salleo A., Mater. Today 10/3 (2007) 38. http://dx.doi.org/10.1016/S1369-7021(07)70018-410.1016/S1369-7021(07)70018-4
  5. [5] Kruszynska M., Knipper M., Kolny-Olesiak J., Borchert H., Parisi J., Thin Solid Films 519/21 (2011) 7374. http://dx.doi.org/10.1016/j.tsf.2010.12.10210.1016/j.tsf.2010.12.102
  6. [6] Farva U., Park C., Sol. Energy Mater. Sol. Cells 94/2 (2010) 303. http://dx.doi.org/10.1016/j.solmat.2009.10.00310.1016/j.solmat.2009.10.003
  7. [7] Sharma S.N., Kumar U., Singh V.N., Mehta B.R., Kakkar R., Thin Solid Films 519/3 (2010) 1202. http://dx.doi.org/10.1016/j.tsf.2010.08.07010.1016/j.tsf.2010.08.070
  8. [8] Aldakov D., Chandezon F., De Bettignies R., Firon M., Reiss P., Pron A., Eur. Phys. J.-Appl. Phys 36/3 (2006) 261. http://dx.doi.org/10.1051/epjap:200614410.1051/epjap:2006144
  9. [9] Choi H.J., Yang J.K., Park H.H., Thin Solid Films 494/1–2 (2006) 207. http://dx.doi.org/10.1016/j.tsf.2005.08.18210.1016/j.tsf.2005.08.182
  10. [10] Liu I.S. et al., J. Mater. Chem. 18/6 (2008) 675. http://dx.doi.org/10.1039/b715253a10.1039/b715253a
  11. [11] Seo J., Kim W.J., Kim S.J., Lee K.S., Cartwright A.N., Prasad P.N., Appl. Phys. Lett. 94/13 (2009) 133302. http://dx.doi.org/10.1063/1.311096910.1063/1.3110969
  12. [12] Li Q.W., Sun B.Q., Kinloch I.A., Zhi D., Sirringhaus H., Windle A.H., Chem. Mat. 18/1 (2006) 164. http://dx.doi.org/10.1021/cm051257510.1021/cm0512575
  13. [13] Milliron D.J., Alivisatos A.P., Pitois C., Edder C., Frechet J.M.J., Adv. Mater. 15/1 (2003) 58. http://dx.doi.org/10.1002/adma.20039001110.1002/adma.200390011
  14. [14] Heinemann M.D. et al., Adv. Funct. Mater. 19/23 (2009) 3788. http://dx.doi.org/10.1002/adfm.20090085210.1002/adfm.200900852
  15. [15] Choi S.H. et al., J. Photochem. Photobiol. A-Chem. 179/1–2 (2006) 135. http://dx.doi.org/10.1016/j.jphotochem.2005.08.00410.1016/j.jphotochem.2005.08.004
  16. [16] Choi H.J., Yang J.K., Yoon S., Park H.H., Appl. Surf. Sci. 244/1–4 (2005) 92. http://dx.doi.org/10.1016/j.apsusc.2004.10.06910.1016/j.apsusc.2004.10.069
  17. [17] Xu J. et al., J. Am. Chem. Soc. 129/42 (2007) 12828. http://dx.doi.org/10.1021/ja074133x10.1021/ja074133x17914821
  18. [18] Choudhury K.R., Samoc M., Patra A., Prasad P.N., J. Phys. Chem. B 108/5 (2004) 1556. http://dx.doi.org/10.1021/jp036067110.1021/jp0360671
  19. [19] Nishioka M., Chen Y., Goldman A.M., Appl. Phys. Lett. 92/15 (2008) 153308. http://dx.doi.org/10.1063/1.291234510.1063/1.2912345
  20. [20] Topp K. et al., J. Phys. Chem. A 114/11 (2010) 3981. http://dx.doi.org/10.1021/jp910227x10.1021/jp910227x20030383
  21. [21] Xu Z.X., Roy V.A.L., Stallinga P., Muccini M., Toffanin S., Xiang H.F., Che C.M., Appl. Phys. Lett. 90/22 (2007) 223509. http://dx.doi.org/10.1063/1.274047810.1063/1.2740478
  22. [22] Remashan K., Choi Y.S., Park S.J., Jang J.H., J. Electrochem. Soc. 157/12 (2010) II1121. 10.1149/1.3502605
  23. [23] Remashan K., Choi Y.S., Park S.J., Jang J.H., Jpn. J. Appl. Phys. 50/4 (2011) 04DJ08. http://dx.doi.org/10.1143/JJAP.50.04DJ0810.1143/JJAP.50.04DJ08
  24. [24] Chiu M.Y., Chen C.C., Sheu J.T., Wei K.H., Org. Electron. 10/5 (2009) 769. http://dx.doi.org/10.1016/j.orgel.2009.03.01110.1016/j.orgel.2009.03.011
  25. [25] Nyk M., Palewska K., Kepinski L., Wilk K.A., Strek W., Samoc M., J. Lumines. 130/12 (2010) 2487. http://dx.doi.org/10.1016/j.jlumin.2010.08.01710.1016/j.jlumin.2010.08.017
  26. [26] Bielecka U., Lutsyk P., Janus K., Sworakowski J., Bartkowiak W., Org. Electron. 12/11 (2011) 1768. http://dx.doi.org/10.1016/j.orgel.2011.06.02710.1016/j.orgel.2011.06.027
  27. [27] Sze S., Ng K. (Eds.), Physics of Semiconductor Devices, Wiley & Sons Ltd., New York, 1997.
  28. [28] Stallinga P. (Ed.), Electrical Characterization of Organic Electronic Materials and Devices, John Wiley & Sons Ltd., Chichester, UK, 2009. 10.1002/9780470750162
  29. [29] Xu W.T., Rhee S.W., J. Mater. Chem. 19/29 (2009) 5250. http://dx.doi.org/10.1039/b905263a10.1039/b905263a
  30. [30] Ng K. (Ed.), Compliete guide to semiconductor devices, John Wiley & Sons Ltd., New York, 2002.
  31. [31] Scheinert S., Paasch G., Schrodner M., Roth H.K., Sensfuss S., Doll T., J. Appl. Phys. 92/1 (2002) 330. http://dx.doi.org/10.1063/1.148625310.1063/1.1486253
  32. [32] Arkhipov V.I., Heremans P., Emelianova E.V., Bassler H., Phys. Rev. B 71/4 (2005) 045214. http://dx.doi.org/10.1103/PhysRevB.71.04521410.1103/PhysRevB.71.045214
  33. [33] Chen C.C., Chiu M.Y., Sheu J.T., Wei K.H., Appl. Phys. Lett. 92/14 (2008) 143105. http://dx.doi.org/10.1063/1.289999710.1063/1.2899997
  34. [34] Huynh W.U., Dittmer J.J., Libby W.C., Whiting G.L., Alivisatos A.P., Adv. Funct. Mater. 13/1 (2003) 73. http://dx.doi.org/10.1002/adfm.20039000910.1002/adfm.200390009
  35. [35] Lee H.J. et al., J. Phys. Chem. C 112/30 (2008) 11600. http://dx.doi.org/10.1021/jp802572b10.1021/jp802572b
DOI: https://doi.org/10.2478/s13536-013-0101-0 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 288 - 297
Published on: Apr 20, 2013
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2013 U. Bielecka, P. Lutsyk, M. Nyk, K. Janus, M. Samoc, W. Bartkowiak, S. Nespurek, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.