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First-principles study of doping and distribution of Si in TiC Cover

First-principles study of doping and distribution of Si in TiC

Materials Science-Poland
Volume 31 (2013): Issue 2 (April 2013)
By:
H. Ding,  T. Ci,  K. Chu and  J. Wang  
Open Access
|Apr 2013

Authors

H. Ding

haimin_ding@163.com

T. Ci

K. Chu

J. Wang

DOI: https://doi.org/10.2478/s13536-012-0095-z | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 259 - 263
Published on: Apr 20, 2013
Published by: Sciendo
In partnership with: Paradigm Publishing Services
Publication frequency: 4 times per year
Keywords:
composite materials,
crystal structure,
defects
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2013 H. Ding, T. Ci, K. Chu, J. Wang, published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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