Optimization of deposition temperature of SILAR Cu-rich CuInS2 thin films
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Abstract
CuInS2 (CIS) is studied widely as a promising absorber material for high efficient and low cost thin film solar cells. CIS thin films are prepared on soda lime glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at different deposition temperatures (40 to 70 °C). The structural, compositional and optical properties are studied with x-ray diffractometer, energy dispersive x-ray analyzer and spectrophotometer. The influence of the deposition temperature on the properties of CIS thin films is discussed in this paper in detail.
Language: English
Page range: 193 - 200
Published on: Apr 20, 2013
Published by: Sciendo
In partnership with: Paradigm Publishing Services
Publication frequency: 4 times per year
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© 2013 B. Maheswari, M. Dhanam, published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.