Have a personal or library account? Click to login
Influence of thermal treatment on the formation of ohmic contacts based on Ti/Al/Ni/Au metallization to n-type AlGaN/GaN heterostructures Cover

Influence of thermal treatment on the formation of ohmic contacts based on Ti/Al/Ni/Au metallization to n-type AlGaN/GaN heterostructures

Open Access
|Dec 2012

References

  1. [1] Amano H., Kito M., Hiramatsu K., Akasak I., Jpn. J. Appl. Phys., 28 (1989), 1705. http://dx.doi.org/10.1143/JJAP.28.L211210.1143/JJAP.28.L2112
  2. [2] Nakamura S., Mukai T., Senoh M., Appl. Phys. Lett., 64 (1994), 1687. http://dx.doi.org/10.1063/1.11183210.1063/1.111832
  3. [3] Ferguson I., Tran C.A., Karlicek R.F., Feng Z.C., Stall R., Liang S., Mater. Sci. Eng., 50 (1997), 311. http://dx.doi.org/10.1016/S0921-5107(97)00196-710.1016/S0921-5107(97)00196-7
  4. [4] Walker D. et al, Appl. Phys. Lett., 68 (1996), 2100. http://dx.doi.org/10.1063/1.11559710.1063/1.115597
  5. [5] Schmitz A.C., Ping A.T., Khan M.A., Chen Q., Yang J.W., Adesida I., J. Electron. Mat., 27 (1998), 255. http://dx.doi.org/10.1007/s11664-998-0396-510.1007/s11664-998-0396-5
  6. [6] Macherzyński W., TłACZAłA M., Elektronika, 7 (2007), 37.
  7. [7] Schroder D.K., Semiconductor material and device characterization, third edition, John Wiley & Sons, New Jersey, 2006. 10.1002/0471749095
  8. [8] Ibbetson J.P., Fini P.T., Ness K.D., Denbaars S.P., Speck J.S., Mishra U.K., Appl. Phys. Lett., 77 (2000), 250. http://dx.doi.org/10.1063/1.12694010.1063/1.126940
  9. [9] Macherzynski W. et al., Optica Applicata, XIXXX, (2009), 673.
DOI: https://doi.org/10.2478/s13536-012-0051-y | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 342 - 347
Published on: Dec 14, 2012
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2012 W. Macherzyński, B. Paszkiewicz, A. Vincze, R. Paszkiewicz, M. Tłaczała, J. Kováč, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.