Study on etching anisotropy of Si(hkl) planes in solutions with different KOH and isopropyl alcohol concentrations
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DOI: https://doi.org/10.2478/s13536-011-0047-z | Journal eISSN: 2083-134X (formerly 2083-124X) | Journal ISSN: 2083-1331
Language: English
Page range: 278 - 284
Published on: May 8, 2012
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Keywords:
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© 2012 K. Rola, I. Zubel, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.