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Study on etching anisotropy of Si(hkl) planes in solutions with different KOH and isopropyl alcohol concentrations Cover

Study on etching anisotropy of Si(hkl) planes in solutions with different KOH and isopropyl alcohol concentrations

Materials Science-Poland
Volume 29 (2011): Issue 4 (December 2011)
By: K. Rola and  I. Zubel  
Open Access
|May 2012

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DOI: https://doi.org/10.2478/s13536-011-0047-z | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 278 - 284
Published on: May 8, 2012
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
anisotropic etching,
silicon surface,
potassium hydroxide,
isopropanol concentration,
(hkl) planes
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2012 K. Rola, I. Zubel, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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