Skip to main content
Have a personal or library account? Click to login
Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3 Cover

Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3

Materials Science-Poland
Volume 29 (2011): Issue 4 (December 2011)
By: ,  ,  ,  ,  ,  ,   and    
Open Access
|May 2012
References

References

  1. [1] VITANOV S., PALANKOVSKI V., MAROLDT S., QUAY R., Proceedings of Semiconductor Device Research Symposium IEEE, (2009), 1–2.
    Search in Google Scholar
  2. [2] HUNG S.C. et al., J. Phys. E., 28 (2005), 115. http://dx.doi.org/10.1016/j.physe.2005.02.008
    Open DOISearch in Google Scholar
  3. [3] LIN M.E. et al., Appl. Phys. Lett., 64 (1994), 887. http://dx.doi.org/10.1063/1.110985
    Open DOISearch in Google Scholar
  4. [4] HUGHES W.C. et al., Mat. Res. Soc. Symp. Proc., 395 (1996), 757. http://dx.doi.org/10.1557/PROC-395-757
    Open DOISearch in Google Scholar
  5. [5] BASAK D. et al., Appl. Phys., 38 (1999), 2646.
    Open DOISearch in Google Scholar
  6. [6] BASAK D., NAKANISHI T. and CitySAKAI S., Solid State Electron., 44 (2000), 725. http://dx.doi.org/10.1016/S0038-1101(99)00303-2
    Open DOISearch in Google Scholar
  7. [7] HONG H.F., CHAO C.K., CHYI J.I. and TZENG Y.C., Mater. Chem. Phys., 77 (2002), 412.
    Search in Google Scholar
  8. [8] FENG M.S., GUO J.D., LU Y.M. and CHANG E.Y., Mater. Chem. Phys., 45 (1996), 82. http://dx.doi.org/10.1016/0254-0584(96)80053-8
    Open DOISearch in Google Scholar
  9. [9] SMITH S.A. et al., Appl. Phys. Lett., 71 (1999), 3631. http://dx.doi.org/10.1063/1.120463
    Open DOISearch in Google Scholar
  10. [10] SHEU J.K. et al., Appl. Phys., 85 (1999), 1970.
    Search in Google Scholar
  11. [11] ZHU K. et al., Appl. Phys. 95 (2004), 4635.
    Open DOISearch in Google Scholar
  12. [12] CHEUNG R., RONG B., VAN DER DRIFT E. and SLOOF W. G., J. Vac. Sci. Technol. B., 21 (2003), 1268. http://dx.doi.org/10.1116/1.1575249
    Open DOISearch in Google Scholar
  13. [13] KIM H.S., YEOM G.Y., LEE J.W. and KIM T.I., J. Vac. Sci. Technol. A., 17 (1999), 2215.
    Open DOISearch in Google Scholar
  14. [14] SCHUETTE M.L. and LU W., J. Vac. Sci. Technol. B., 25 (2007), 1871. http://dx.doi.org/10.1116/1.2796183
    Open DOISearch in Google Scholar
  15. [15] KUYPERS A.D. and HOPMAN H.J., Appl. Phys., 63 (1988), 1970.
    Open DOISearch in Google Scholar
  16. [16] OLESZKIEWICZ W. et al., Proceedings of Advanced Semiconductor Devices & Microsystems, 8th international conference IEEE, (2010), 49–52.
    Search in Google Scholar
  17. [17] FAN Z., MOHAMMAD S.N., AKTAS O., BOTCHKAREV A.E. and MORKOÇ H., Appl. Phys. Lett., 68 (1996), 1672–1674. http://dx.doi.org/10.1063/1.115901
    Open DOISearch in Google Scholar
DOI: https://doi.org/10.2478/s13536-011-0045-1 | Journal eISSN: 2083-134X (formerly 2083-124X) | Journal ISSN: 2083-1331
Journal RSS Feed
Language: English
Page range: 260 - 265
Published on: May 8, 2012
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Keywords:
plasma,
RIE,
reactive ion etching,
Cl2 ,
BCl3 ,
HEMT
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2012 J. Gryglewicz, W. Oleszkiewicz, M. Ramiączek-Krasowska, A. Szyszka, J. Prażmowska, B. Paszkiewicz, R. Paszkiewicz, M. Tłaczała, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 29 (2011): Issue 4 (December 2011)
Previous article
Next article