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Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3 Cover

Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3

Materials Science-Poland
Volume 29 (2011): Issue 4 (December 2011)
By: J. Gryglewicz,  W. Oleszkiewicz,  M. Ramiączek-Krasowska,  A. Szyszka,  J. Prażmowska,  B. Paszkiewicz,  R. Paszkiewicz and  M. Tłaczała  
Open Access
|May 2012
DOI: https://doi.org/10.2478/s13536-011-0045-1 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 260 - 265
Published on: May 8, 2012
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
plasma,
RIE,
reactive ion etching,
Cl2,
BCl3,
HEMT
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2012 J. Gryglewicz, W. Oleszkiewicz, M. Ramiączek-Krasowska, A. Szyszka, J. Prażmowska, B. Paszkiewicz, R. Paszkiewicz, M. Tłaczała, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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