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Design and Development of Boost PFC Converter for Medium-Power High-Voltage Power Supply Cover

Design and Development of Boost PFC Converter for Medium-Power High-Voltage Power Supply

Open Access
|Sep 2026

Figures & Tables

Figure 1.

Block diagram of the HV power supply system for a DBD-based ESP–NTP system. DBD, dielectric barrier discharge; ESP, electrostatic precipitators; HV: high voltage; NTP, non-thermal plasma; PFC, power factor correction.

Table 1.

Design specification for boost PFC.

ParametersValueParametersValue
Input voltage230V ACSwitching frequency50 kHz
Boost output voltage400V DCPFC inductor6.6 mH
Output power900 WEquivalent load resistance177.78 Ω

[i] PFC, power factor correction.

Figure 2.

PFC control block diagram. PFC, power factor correction.

Figure 3.

Inner current control loop in boost PFC systems. PFC, power factor correction.

Figure 4.

Closed-loop step responses of the inner current loop with different PI tuning methods. Ts: Settling time, OS: overshoot, Tr: rise time. PI, proportional integral.

Figure 5.

Simplified equivalent circuit diagram of boost PFC based on average power. PFC, power factor correction.

Figure 6.

Outer voltage control loop in boost PFC systems. PFC, power factor correction.

Figure 7.

Closed-loop step responses of the outer voltage loop with different PI tuning methods. Ts: Settling time, OS: overshoot, Tr: rise time. PI, proportional integral.

Figure 8.

Control architecture of boost PFC converter with dual-loop regulation. PFC, power factor correction; PI, proportional integral.

Table 2.

Qualitative comparative performance of inner current control strategies for boost PFC converters.

Performance parameterPIPRHCCDBMPCMFPCSMCProposed PI
Computational and implementation aspects
Computational burden (per cycle)LMLHVHMML
Implementation complexityLMLHVHMHL
Parameter sensitivityMMLVHHLVLM
Dynamic performance
Current transient responseSFVFVFVFFFS
Phase error (grid frequency)NZZNrZZNrZNrZZNrZ
Steady-state performance
Steady-state current THD>5%<5%<3%<5%<2%<5%<3%<5%
Steady-state errorNZZNrZZNrZNrZZNrZ

[i] DB, deadbeat; F, fast; H, high; HCC, hysteresis current control; L, low; M, moderate; MFPC, model-free predictive control; MPC, model predictive control; NrZ, near zero; NZ, non-zero; PI, proportional integral; PR, proportional resonant; S, slow; SMC, sliding mode control; VF, very fast; VH, very high; Z, zero.

Table 3.

Experimental hardware specifications and statistical performance parameters of the compared control strategies.

Control strategy (references)Rated power (W)Vin/Vout (V)Output capacitor (μF)Switching frequency (kHz)THD (%)PF
PI: Okilly and Baek (2022)2,000220/4009501005.50.9935
PR: Liu et al. (2013)3,000220/40094019.2N.RN.R
HCC: Shehata et al. (2023)10040/1001,000212.610.999
DB: Mattavelli et al. (2005)400230/40033050N.RN.R
MPC: Israr and Samuel (2025)500220/400100201.80.999
MFPC: Gu et al. (2021)1,000110/30099050N.R0.99
SMC: Mohanty and Panda (2016)500230/3904702002.40.999
Proposed work (FDM-GART PI)900230/4001,000504.70.999

[i] N.R. = Not explicitly reported in the text.DB, deadbeat; FDM, frequency-differentiated modelling; GART, grid-aligned resonance tuning; HCC, hysteresis current control; MFPC, model-free predictive control; MPC, model predictive control; PF, power factor; PI, proportional integral; PR, proportional resonant; SMC, sliding mode control; THD, total harmonic distortion.

Figure 9.

Bode analysis of the effect of Reff on the inner current loop.

Figure 10.

Bode analysis of inner current loop for capacitor variations.

Figure 11.

Combined plot of THD and settling time versus output capacitance. THD, total harmonic distortion.

Table 4.

Simulation parameters.

ParametersValueParametersValue
Output capacitor1,000 µFSwitch on-resistance0.25 Ω
ESR of capacitor0.1076 ΩForward resistance of diode0.03 Ω
Resistance of the inductor0.5 ΩDiode cut-in voltage1.05V

[i] ESR, equivalent series resistance.

Figure 12.

(a) Steady-state operation of boost PFC under rated load conditions; (b) Zoomed-in waveform showing input current tracking input-voltage and output-voltage ripple; (c) THD of input current. PFC, power factor correction; THD, total harmonic distortion.

Figure 13.

Load regulation performance of boost PFC converter. PFC, power factor correction.

Figure 14.

Line regulation performance of boost PFC converter. PFC, power factor correction.

Figure 15.

Experimental hardware setup of the 900 W boost PFC prototype. PFC, power factor correction.

Figure 16.

Input voltage Vin (C1: 200V/div), input current Iin (C2: 10 A/div), output current Io (C4: 1 A/div), output voltage Vo (C3: 100V/div). PF, power factor; THD, total harmonic distortion.

Figure 17.

Load regulation performance of boost PFC converter. Input voltage Vin (C1: 200V/div), input current Iin (C2: 10 A/div), output current Io (C4: 2 A/div), output voltage Vo (C3: 100V/div). PFC, power factor correction.

Figure 18.

Line regulation performance of boost PFC converter. Input voltage Vin (C1: 200V/div), input current Iin (C2: 10 A/div), output current Io (C4: 2 A/div), output voltage Vo (C3: 100V/div). PFC, power factor correction.

Figure 19.

(a) Input-current waveforms before and after PFC activation. (b) THD measurement. PF, power factor; PFC, power factor correction; THD, total harmonic distortion.

Figure 20.

Power loss distribution of the boost PFC converter. PFC, power factor correction.

Table 5.

Analytical loss models and derived current expressions for the PFC converter power-stage components.

ComponentsLoss modelAnalytical expressionDerived current expressions used for loss calculation
Bridge rectifierConduction loss, PL,BR,cond 2VF×Iin,avg+2rd×Iin,rms2 Iin,avg=4VoIoπVin,pk;Iin,rms=2VoIoVin,pk
InductorCopper loss, PL,L,cu IL,rms2RDC,L IL,avg=4VoIoπVin,pk;IL,rms=2VoIoVin,pk
Core loss, PL,L,core Pv×Vc
Switch (MOSFET)Conduction loss, PL,sw,cond Isw,rms2RDson Isw,avg=4VoIoπVin,pkIo;Isw,rms=2VoIoVin,pk124Vin,pk2πVo
Switching loss, PL,sw,sl fs2VoIL,avgtr+tf
DiodeConduction loss, PL,D,cond VF×ID,avg+rd×ID,rms2 ID,avg=Io;ID,rms=4IoVo3πVin,pk
CapacitorESR, PL,C,ESR IC,rms2×RESR IC,avg=0;IC,rms=Io2

[i] ESR, equivalent series resistance; fs, Switching frequency; IC,avg, Average capacitor current; IC,rms, RMS capacitor current; ID,avg, Average diode current; ID,rms, RMS diode current; Iin,avg, Average input current; Iin,rms, RMS input current; IL,avg, Average inductor current; IL,rms, RMS inductor current; IO, Output current; Isw,avg, Average switch current; Isw,rms, RMS switch current; PFC, power factor correction; Pv, Volumetric core loss density; rd, diode dynamic resistance; RDS(on), MOSFET’s on-resistance; RESR, ESR of capacitor; tf, Fall time; tr, Rise time; Vc, Core volume; VF, Diode forward voltage drop; Vin,pk, Peak input voltage; VO, Output voltage.

Figure 21.

Efficiency profile and PF performance of the proposed 900 W boost PFC prototype operating at a nominal input of 230Vrms. PF, power factor; PFC, power factor correction.

DOI: https://doi.org/10.2478/pead-2026-0027 | Journal eISSN: 2543-4292 | Journal ISSN: 2451-0262
Language: English
Page range: 418 - 444
Submitted on: Apr 28, 2026
Accepted on: Aug 10, 2026
Published on: Sep 12, 2026
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services

© 2026 Deepu E. Koshy, S. A. Kannan, T. K. Sindhu, M. P. Shreelakshmi, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution 4.0 License.