References
- [1] M
ayet A.S., Cansizoglu H., Gao Y., Ghandiparsi S., Kaya A., Bartolo -Perez C., Alhalaili B., Yamada T., Ponizovskaya Devine E., Elrefaie A. F., Wang S-Y., Saif Islam M., JOSA B, 5 (2018), 1059. - [2] E
l Amrani A., Bekhtari A., El Kechai A., Menari H., Mahiou L., Maoudj M., Si Kaddour R., Superlattices Microstruct., 73 (2014), 224. - [3] B
alaji N., Lee S., Park C., Raja J., Nguyen H.T.T., Chatterjee Nikesh S.K., Jeyakumar R., Junsin Y., RSC Adv., 6 (2016), 70040. - [4] G
atz S., Plagwitz H., Altermatt P.P., Terheiden B., Brendel R., Proc. 23rd EUPVSEC, Valencia, Spain, 2008 (2008), 1033. - [5] K
aminski P.M., Abbas A., Bass K., Claudio G., Energy Procedia, 10 (2011), 71. - [6] L
ebreton F., Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes, Thesis, Université Paris-Saclay, 2017. - [7] H
ameiri Z., Borojevic N., Mai L., Nandakumar N., Kim K., Winderbaum S., IEEE J Photovolt., 7 (4) (2017), 996. - [8] C
otter J. E., Guo J. H., Cousins P. J., Abbott M. D., Chen F. W., Fisher K. C., IEEE T. Electron. Dev., 53 (8) (2006), 1893. - [9] K
im K., Dhungel S. K., Yoo J., Jung S., Mangalaraj D., Yi J., J. Korean Phys. Soc., 51(5) (2007), 1659. - [10] C
uevas A., Kerr M. J., Schmidt J., Proc. 3rd World Conf. Photovolt. Energy Convers., (2003), 913. - [11] K
err M., Cuevas A., Semicond. Sci. Technol., 17 (2) (2002), 166. - [12] Z
hao J., Sol. Energ. Mater. Sol. C., 82 (53) (2004), 53. - [13] R
yu K., Kim S.-J., J. Korean Inst. Electr. Electron. Mater. Eng., 26 (1) (2013), 18. - [14] K
im W.B., Matsumoto T., Kobayashi H., J. Appl. Phys., 105 (2009), 103709-1. - [15] I
mamura K., Takahashi M. A., Hirayama Y., Imai S., Kobayashi H., J. Appl. Phys., 107 (2010), 054503. - [16] H
u Y.-C., Chiu M.-H., Wang L., Tsai J.-L., Jpn. J. Appl. Phys., 49 (2) (2010), 022301-1. - [17] L
arionova Y., Harder N.-P., Brendel R., Proc. 25th EUPVSEC/5th World Conf. Photovolt. Energy Convers., Valencia, Spain, 2010 (2010), 1143. - [18] L
eguijt C., Lölgen P., Eikelboom J.A., Weeber A.W., Schuurmans F.M., Sinke W.C., Alkemade P.F.A., Sarro P.M., Marée C.H.M., Verhoef L.A., Sol. Energ. Mater. Sol. C., 40(4) (1995), 297. - [19] C
hen Z., Pang S.K., Yasutake K., Rohatgi A., J. Appl. Phys., 74 (1993), 2856.10.1063/1.354638 - [20] L
iu C.P., Chang M.W., Chuang C.L., Curr. Appl. Phys., 14 (2014), 653. - [21] S
chmidt J., Kerr M., Cuevas A., Semicond. Sci. Technol., 16 (2001), 164. - [22] M
assoud H.Z., Plummer J.D., Irene E.A., J. Electrochem. Soc., 132 (11) (1985), 2693.