Have a personal or library account? Click to login
SiN/SiO2 passivation stack of n-type silicon surface Cover

SiN/SiO2 passivation stack of n-type silicon surface

Materials Science-Poland
Volume 37 (2019): Issue 3 (September 2019)
By: A. El Amrani,  R. Si-Kaddour,  M. Maoudj and  C. Nasraoui  
Open Access
|Oct 2019

Authors

A. El Amrani

elamrani@msn.com

Research Center in Semiconductor Technology for Energetic, Algiers, Algeria

R. Si-Kaddour

Research Center in Semiconductor Technology for Energetic, Algiers, Algeria

M. Maoudj

Research Center in Semiconductor Technology for Energetic, Algiers, Algeria

C. Nasraoui

Research Center in Semiconductor Technology for Energetic, Algiers, Algeria
DOI: https://doi.org/10.2478/msp-2019-0065 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Journal RSS Feed
Language: English
Page range: 482 - 487
Submitted on: Oct 28, 2018
|
Accepted on: Apr 23, 2019
|
Published on: Oct 18, 2019
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
silicon,
passivation,
silicon nitride,
oxide
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2019 A. El Amrani, R. Si-Kaddour, M. Maoudj, C. Nasraoui, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Previous articleVolume 37 (2019): Issue 3 (September 2019)Next article