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Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film Cover

Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Materials Science-Poland
Volume 37 (2019): Issue 3 (September 2019)
By: Asim Mantarci and  Mutlu Kundakçi  
Open Access
|Oct 2019

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DOI: https://doi.org/10.2478/msp-2019-0052 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 454 - 464
Submitted on: Jul 23, 2018
|
Accepted on: Mar 1, 2019
|
Published on: Oct 18, 2019
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
RF magnetron sputtering,
thin film,
III-nitride,
GaN,
semiconductor
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2019 Asim Mantarci, Mutlu Kundakçi, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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