Skip to main content
Have a personal or library account? Click to login
Electronically tunable multiplier-free floating memtranstor emulator employing VDTA and VDCC Cover

Electronically tunable multiplier-free floating memtranstor emulator employing VDTA and VDCC

Open Access
|Jun 2026

References

  1. F. Ottati, C. Gao, Q. Chen, et al., “To spike or not to spike: A digital hardware perspective on deep learning acceleration,” IEEE J. Emerg. Sel. Topics Circuits Syst., vol. 13, no. 4, pp. 1015–1025, 2023, doi: 10.1109/JETCAS.2023.3330432.
  2. F. Zahoor, F. A. Hussin, U. B. Isyaku, et al., “Resistive random access memory: Introduction to device mechanism, materials and application to neuromorphic computing,” Discover Nano, vol. 18, no. 1, p. 36, 2023, doi: 10.1186/s11671-023-03775-y.
  3. L. A. Camunas-Mesa, B. Linares-Barranco, and T. Serrano-Gotarredona, “Neuromorphic spiking neural networks and their memristor-CMOS hardware implementations,” Materials, vol. 12, no. 17, p. 2745, 2019, doi: 10.3390/ma12172745.
  4. M. Di Ventra, Y. V. Pershin, and L. O. Chua, “Putting memory into circuit elements: Memristors, memcapacitors, and mem-inductors,” Proc. IEEE, vol. 97, no. 8, pp. 1371–1372, 2009, doi: 10.1109/JPROC.2009.2022882.
  5. S. Shekinah Archita and V. Ravi, “Review of memristor based neuromorphic computation: Opportunities, challenges and applications,” Eng. Res. Express, vol. 6, p. 032203, 2024, doi: 10.1088/2631-8695/ad6662.
  6. L. Chua, “Memristor—The missing circuit element,” IEEE Trans. Circuit Theory, vol. 18, no. 5, pp. 507–519, 1971, doi: 10.1109/TCT.1971.1083337.
  7. C. Zheng, L. Peng, J. Cen, and H. H. Iu, “The first implementation of a memtranstor emulator and its artificial synaptic plasticity analysis,” IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst., vol. 43, no. 7, pp. 2126–2139, 2024, doi: 10.1109/TCAD.2024.3355848.
  8. D. S. Shang, Y. S. Chai, Z. H. Cao, J. Lu, and Y. Sun, “Toward the complete relational graph of fundamental circuit elements,” Chin. Phys. B, vol. 24, no. 6, p. 068402, 2015.
  9. J. Shen, D. S. Shang, Y. Chai, et al., “Nonvolatile multi-level memory and Boolean logic gates based on a single memtranstor,” Phys. Rev. Appl., vol. 6, p. 064028, 2016.
  10. J. Shen, D. Shang, Y. Chai, S. Wang, B. Shen, and Y. Sun, “Mimicking synaptic plasticity and neural network using memtranstors,” Adv. Mater., vol. 30, no. 12, p. e1706717, 2018, doi: 10.1002/adma.201706717.
  11. U. E. Ayten, M. Çayır, S. Minaei, et al., “OTA and DO-CCII based floating memtranstor emulator with electronically tunability property,” Circuits Syst. Signal Process., 2025, doi: 10.1007/s00034-025-03225-3.
  12. M. Sağbaş, M. Çayır, S. Minaei, and U. Ayten, “Artificial synaptic device and chaotic oscillator implementation using a novel floating memtranstor emulator,” Int. J. Circ. Theory Appl., 2025, doi: 10.1002/cta.4559.
  13. R. K. Ranjan and S. M. Kang, “Resistorless floating/grounded memristor emulator model with electronic tunability,” IEEE Trans. Circuits Syst. II Exp. Briefs, vol. 70, no. 7, pp. 2340–2344, 2023, doi: 10.1109/TCSII.2023.3242301.
  14. J. S. Verma, M. Joshi, R. K. Ranjan, and S. M. Kang, “A compact memristor emulator for novel IC applications: Its design and experimental validation,” Chaos Solitons Fractals, vol. 183, p. 114824, 2024, doi: 10.1016/j.chaos.2024.114824.
  15. F. Saydam, D. Ersoy, and F. Kacar, “A novel resistorless memristor emulator circuit and its implementation of chaotic jerk system,” AEU - Int. J. Electron. Commun., vol. 184, p. 155424, 2024, doi: 10.1016/j.aeue.2024.
  16. N. Raj, R. K. Ranjan, F. Khateb, and M. Kumngern, “Mem-elements emulator design with experimental validation and its application,” IEEE Access, vol. 9, pp. 69860–69875, 2021, doi: 10.1109/ACCESS.2021.3078189.
  17. S. S. Prasad, P. Kumar, and R. K. Ranjan, “Resistorless memristor emulator using CFTA and its experimental verification,” IEEE Access, vol. 9, pp. 64065–64075, 2021.
  18. K. Bhardwaj and M. Srivastava, “New multiplier-less compact tunable charge-controlled memelement emulator using grounded passive elements,” Circuits Syst. Signal Process., vol. 41, pp. 2429–2465, 2022, doi: 10.1007/s00034-021-01895-3.
  19. M. O. Korkmaz, M. Sagbas, Y. Babacan, and A. Yesil, “Single VDCC based memcapacitor emulator circuit without using passive elements and analog multiplier,” Indian J. Pure Appl. Phys., vol. 62, no. 4, pp. 310–319, 2024.
  20. K. Bhardwaj and M. Srivastava, “New grounded passive elements-based external multiplier-less memelement emulator to realize the floating meminductor and memristor,” Analog Integr. Circuits Signal Process., vol. 110, no. 3, pp. 409–429, 2022.
  21. H. Sozen and U. Cam, “A novel floating/grounded mem-inductor emulator,” J. Circuits Syst. Comput., vol. 29, no. 15, p. 2050247, 2020.
  22. J. Shen, J. Cong, D. Shang, et al., “A multilevel nonvolatile magnetoelectric memory,” Sci. Rep., vol. 6, p. 34473, 2016, doi: 10.1038/srep34473.
  23. P. P. Lu, D. S. Shang, J. X. Shen, et al., “Nonvolatile transtance change random access memory based on magnetoelectric P(VDF-TrFE)/Metglas heterostructures,” Appl. Phys. Lett., vol. 109, p. 252902, 2016.
  24. A. Ahlawat, A. A. Khan, P. Deshmukh, et al., “Effect field-controlled magnetization in NiFe2O4/SrRuO3/PMN-PT heterostructures for nonvolatile memory applications: XMCD study,” Appl. Phys. Lett., vol. 119, no. 11, p. 112902, 2021.
  25. S. Shen, D. Shang, Y. Chai, and Y. Sun, “Realization of a flux-driven memtranstor at room temperature,” Chin. Phys. B, vol. 25, no. 2, p. 027703, 2016.
  26. S. Mishra, A. Das, and A. J. Akhtar, “Room temperature tuning of nonvolatile magnetoelectric memory in Al doped Sr3Co2Fe24O41,” Ceram. Int., vol. 47, no. 20, pp. 29261–29266, 2021.
  27. M. Çayır, M. Sağbaş, S. Minaei, and U. E. Ayten, “Resistorless electronically tunable floating memtranstor emulator and its application to chaotic oscillators,” AEU - Int. J. Electron. Commun., vol. 201, p. 155971, 2025, doi: 10.1016/j.aeue.2025.155971.
  28. M. Kumar, S. K. Rai, B. Aggarwal, and M. Gupta, “Design of a new compact multiplier-less memtranstor emulator and its application in neuromorphic and chaos generation,” Integration, vol. 105, p. 102511, 2025, doi: 10.1016/j.vlsi.2025.102511.
  29. M. Çayır, and M. Sağbaş, “Design of a Novel Memtranstor Emulator Using CCIIs and Experimental Validation,” J. Comput. Electron., vol. 24, no. 88, 2025, doi: 10.1007/s10825-025-02424-0.
DOI: https://doi.org/10.2478/jee-2026-0031 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
Language: English
Page range: 323 - 338
Submitted on: Apr 15, 2026
Published on: Jun 17, 2026
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year

© 2026 Predrag Petrović, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.