Have a personal or library account? Click to login
Integrable emulation of a floating incremental/decremental inverse memristor for memristor bandwidth extension Cover

Integrable emulation of a floating incremental/decremental inverse memristor for memristor bandwidth extension

Open Access
|Feb 2024

References

  1. L. O. Chua, “Memristor – the missing circuit element,” IEEE Trans. Circuit Theory, vol. 18, no. 5, pp. 507–519, 1971.
  2. L. Chua, “If It’s Pinched It’s a Memristor,” in Memristors and Memristive Systems, R. Tetzlaff, Ed. Springer, New York, NY, 2014.
  3. L. O. Chua et al., “Everything you wish to know about memristors but are afraid to ask,” Radio-engineering, vol. 24, no. 2, p. 319, 2015. DOI: 10.13164/re.2015.0319.
  4. B. Mouttet, “Memresistors and nonmemristive zero crossing hysteresis curves,” arXiv:1201.2626v3, 2012.
  5. S. P. Adhikari, M. P. Sah, H. Kim, and L. O. Chua, “Three Fingerprints of Memristor,” IEEE Trans. Circuits and Systems I: Regular Papers, vol. 60, no. 11, pp. 3008-3021, Nov. 2013. DOI: 10.1109/TCSI.2013.2256171.
  6. A. Elwakil, M. E. Fouda, and A. G. Radwan, “A Simple Model of Double-Loop Hysteresis Behavior in Memristive Elements,” IEEE Trans. Circuits and Systems II: Express Briefs, vol. 60, no. 8, pp. 487-491, Aug. 2013. DOI: 10.1109/TCSII.2013.2268376.
  7. D. Biolek, Z. Biolek, V. Biolkova, A. Tetzlaff, “About v-i Pinched Hysteresis of Some Non-Memristive Systems,” Mathematical Problems in Engineering, 2018. https://www.hindawi.com/journals/mpe/2018/1747865/
  8. M. E. Fouda, A. S. Elwakil, A. G. Radwan, “Pinched hysteresis with inverse-memristor frequency characteristics in some nonlinear circuit elements,” Microelectronics Journal, vol. 46, no. 9, pp. 834-838, Sep. 2015.
  9. M. E. Fouda, A. G. Radwan, and A. Elwakil, “Memristor and inverse memristor: Modeling, implementation and experiments,” in Advances in Memristors, Memristive Devices and Systems, Springer, 2017.
  10. N. A. Khalil, L. A. Said, A. G. Radwan, and A. M. Soliman, “A Simple BJT Inverse Memristor Emulator and Its Application in Chaotic Oscillators,” 2019 Fourth International Conference on Advances in Computational Tools for Engineering Appli-cations (ACTEA), pp. 1-4, 2019. DOI: 10.1109/ACTEA.2019.8851104.
  11. X. Song, G. Dai, Z. Zhao, and M. Han, “A novel active inverse memristor emulator with improved low frequency feature,” 2021 China Automation Congress (CAC), pp. 6959-6963, 2021. DOI: 10.1109/CAC53003.2021.9727871.
  12. H. G. Hezayyin, N. A. Khalil, and A. H. Madian, “Inverse memrsitor emulator active Realizations,” 2020 2nd Novel Intelligent and Leading Emerging Sciences Conference (NILES), pp. 461-464, 2020. DOI: 10.1109/NILES50944.2020.9257961.
  13. K. Bhardwaj and M. Srivastava, “Floating Memristor and Inverse Memristor Emulators with Electronic Tuning,” Journal of Circuits, Systems and Computers, vol. 30, no. 12, 2150224, 2021.
  14. K. Bhardwaj and M. Srivastava, “Floating memristor and inverse memristor emulation configurations with electronic/resistance controllability,” IET Circuits Devices Syst., vol. 14, pp. 1065-1076, 2020.
  15. A. Khan and P. Beg, “Fully Differential Sinusoidal Quadrature Oscillator Using CMOS DVCC,” International Conference on Communication, Computer, and Power, pp. 196-198, 2009.
  16. H. C. Chien and Y. K. Lo, “Design and Implementation of Monostable Multivibrators Employing Differential Voltage Current Conveyors,” Microelectronics Journal, vol. 42, no. 10, pp. 1107-1115, 2011. DOI: 10.1016/j.mejo.2011.07.005.
  17. H. C. Chien, “Voltage-Controlled Dual Slope Operation Square/Triangular Wave Generator and its Application as a Dual Mode Operation Pulse Width Modulator Employing Differential Voltage Current Conveyors,” Microelectronics Journal, vol. 43, no. 12, pp. 962-974, 2012. DOI: 10.1016/j.mejo.2012.08.005.
  18. H. O. Elwan and A. M. Soliman, “Novel CMOS Differential Voltage Current Conveyor and its Applications,” IET Proc.-Circuits Devices Syst., vol. 144, no. 3, pp. 195-200, 1997. DOI: 10.1049/ip-cds:19971081.
DOI: https://doi.org/10.2478/jee-2024-0001 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
Language: English
Page range: 1 - 7
Submitted on: Nov 24, 2023
|
Published on: Feb 10, 2024
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year

© 2024 Kapil Bhardwaj, Ravuri Narayana, Dheeraj Kalra, Mayank Srivastava, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.