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Inhomogeneous HfO2 layer growth at atomic layer deposition Cover

Inhomogeneous HfO2 layer growth at atomic layer deposition

Journal of Electrical Engineering
Volume 74 (2023): Issue 4 (August 2023)
By: Aarne Kasikov,  Aivar Tarre and  Guillermo Vinuesa  
Open Access
|Aug 2023

Authors

Aarne Kasikov

aarnek@ut.ee

Institute of Physics, University of Tartu, Estonia

Aivar Tarre

Institute of Physics, University of Tartu, Estonia

Guillermo Vinuesa

Department of Electronics, University of Valladolid, Spain
DOI: https://doi.org/10.2478/jee-2023-0031 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 246 - 255
Submitted on: May 11, 2023
|
Published on: Aug 29, 2023
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
hafnium thin films,
spectroscopic ellipsometry,
growth inhomogeneity,
atomic layer deposition,
packing density,
resistive switching,
filament formation
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2023 Aarne Kasikov, Aivar Tarre, Guillermo Vinuesa, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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