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Optical properties of electrochemically etched N-type silicon wafers for solar cell applications Cover

Optical properties of electrochemically etched N-type silicon wafers for solar cell applications

Journal of Electrical Engineering
Volume 71 (2020): Issue 6 (December 2020)
By: Martin Králik,  Matej Goraus and  Emil Pinčík  
Open Access
|Dec 2020

Authors

Martin Králik

martin.kralik@fel.uniza.sk

Institute of Aurel Stodola, Faculty of Electrical Engineering and Information Technology, University of Žilina, Slovakia

Matej Goraus

Physics Department, Faculty of Electrical Engineering and Information Technology, University of Žilina, Žilina, Slovakia

Emil Pinčík

Institute of Physics, Slovak Academy of Sciences, Bratislava, Slovakia
DOI: https://doi.org/10.2478/jee-2020-0055 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 406 - 412
Submitted on: Jul 2, 2020
Published on: Dec 24, 2020
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
electrochemical etching,
effective medium approximation,
Looyenga EMA,
modified Fresnel coefficients,
reflectivity,
Tauc-Lorentz dispersion model
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2020 Martin Králik, Matej Goraus, Emil Pinčík, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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