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Graphene prepared on SiC by chemical vapor deposition process at low temperature Cover

Graphene prepared on SiC by chemical vapor deposition process at low temperature

Journal of Electrical Engineering
Volume 70 (2019): Issue 4 (August 2019)
By: Petr Machac  
Open Access
|Oct 2019

Authors

Petr Machac

petr.machac@vscht.cz

University of Chemistry and Technology, Prague 6
DOI: https://doi.org/10.2478/jee-2019-0064 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 329 - 331
Submitted on: Jun 6, 2019
|
Published on: Oct 21, 2019
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
graphene,
CVD process,
SiC
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2019 Petr Machac, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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