Abstract
Graphene preparation by the method of chemical vapour deposition on SiC substrates is described. Despite very low growth temperature (1080 °C) and with use of methane atmosphere, carbon layers in the form of multi-layer graphene were prepared. Graphene quality was verified by means of available analytical methods: Raman spectroscopy, X-ray photoelectron spectroscopy, Van der Paw method.
Language: English
Page range: 329 - 331
Submitted on: Jun 6, 2019
Published on: Oct 21, 2019
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
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© 2019 Petr Machac, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.