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Reliability improvement of electrically active defect investigations by analytical and experimental deep level transient: Fourier spectroscopy investigations Cover

Reliability improvement of electrically active defect investigations by analytical and experimental deep level transient: Fourier spectroscopy investigations

Journal of Electrical Engineering
Volume 70 (2019): Issue 7 (December 2019)
By: Arpad Kosa,  Beata Sciana and  Lubica Stuchlikova  
Open Access
|Sep 2019

Authors

Arpad Kosa

arpad.kosa@stuba.sk

Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava, Slovakia

Beata Sciana

Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Wroclaw, Poland

Lubica Stuchlikova

Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava, Slovakia
DOI: https://doi.org/10.2478/jee-2019-0038 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 27 - 35
Submitted on: Mar 19, 2019
|
Published on: Sep 28, 2019
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
deep level transient Fourier spectroscopy,
Arrhenius data analysis,
electrically active defects,
GaAs p-i-n,
deep energy level
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2019 Arpad Kosa, Beata Sciana, Lubica Stuchlikova, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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