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Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions Cover

Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

Journal of Electrical Engineering
Volume 66 (2015): Issue 6 (November 2015)
By: Ladislav Harmatha,  Miroslav Mikolášek,  L’ubica Stuchlíková,  Arpád Kósa,  Milan Žiška,  Ladislav Hrubčín and  Vladimir A. Skuratov  
Open Access
|Dec 2015

References

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DOI: https://doi.org/10.2478/jee-2015-0053 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 323 - 328
Submitted on: Mar 4, 2015
Published on: Dec 5, 2015
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
silicon HIT solar cell,
amorphous-crystalline silicon heterostructure,
DLTS measurement,
high-energy heavy Xe ions irradiation,
radiation hardness
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2015 Ladislav Harmatha, Miroslav Mikolášek, L’ubica Stuchlíková, Arpád Kósa, Milan Žiška, Ladislav Hrubčín, Vladimir A. Skuratov, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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