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Ohmic Conacts to p-GaN on the Basis of Carbon Nanomaterials Cover

Ohmic Conacts to p-GaN on the Basis of Carbon Nanomaterials

Journal of Electrical Engineering
Volume 65 (2014): Issue 6 (November 2014)
By: Liday Jozef,  Vogrinčič Peter,  Vretenár Viliam,  Kotlár Mário,  Marton Marián,  Mikolášek Miroslav and  Řeháček Vlastimil  
Open Access
|Jan 2015
Authors

Authors

Liday Jozef

jozef.liday@stuba.sk

Vogrinčič Peter

Vretenár Viliam

Kotlár Mário

Marton Marián

Mikolášek Miroslav

Řeháček Vlastimil

DOI: https://doi.org/10.2478/jee-2014-0063 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 386 - 389
Submitted on: Mar 15, 2014
Published on: Jan 31, 2015
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
p-GaN,
ohmic contacts,
carbon nanotubes (CNT),
reduced graphene oxide (r-GO)
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2015 Liday Jozef, Vogrinčič Peter, Vretenár Viliam, Kotlár Mário, Marton Marián, Mikolášek Miroslav, Řeháček Vlastimil, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 65 (2014): Issue 6 (November 2014)
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