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Electrical Properties of Recessed Algan/Gan Schottky Diodes Under off–State Stress Cover

Electrical Properties of Recessed Algan/Gan Schottky Diodes Under off–State Stress

Journal of Electrical Engineering
Volume 65 (2014): Issue 5 (September 2014)
By: Martin Florovič,  Jaroslav Kováč,  Peter Benko,  Aleš Chvála,  Jaroslava Škriniarová and  Peter Kordó  
Open Access
|Nov 2014

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DOI: https://doi.org/10.2478/jee-2014-0051 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 313 - 316
Submitted on: Jun 15, 2014
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Published on: Nov 5, 2014
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
AlGaN/GaN Schottky diode,
2DEG,
off-state stress,
traps,
recess
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2014 Martin Florovič, Jaroslav Kováč, Peter Benko, Aleš Chvála, Jaroslava Škriniarová, Peter Kordó, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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