Skip to main content
Have a personal or library account? Click to login
Structural Characterization of Doped Thick Gainnas Layers - Ambiguities and Challenges Cover

Structural Characterization of Doped Thick Gainnas Layers - Ambiguities and Challenges

Journal of Electrical Engineering
Volume 65 (2014): Issue 5 (September 2014)
By: Damian Pucicki,  Katarzyna Bielak,  Beata Ściana,  Wojciech Dawidowski,  Karolina Żelazna,  Jarosław Serafińczuk,  Jaroslav Kováč,  Andrej Vincze,  Łukasz Gelczuk and  Piotr Dłużewski  
Open Access
|Nov 2014
References

References

  1. [1] WEYERS, M.-SATO, M.-ANDO, H. : Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers, Japanese Journal of Applied Physics Part 2 31 No. 7A (1992), 853-855.10.1143/JJAP.31.L853
    Search in Google Scholar
  2. [2] BISPING, D.-PUCICKI, D.-FISCHER, M.-HOEFLING, S.-FORCHEL, A. : Influence of Arsenic Flux on The Annealing Properties of GaInNAs Quantum Wells for Long Wavelength Laser Applications Around 1.6 μm, Journal of Crystal Growth 311 (2009), 1715-1718.10.1016/j.jcrysgro.2008.09.206
    Search in Google Scholar
  3. [3] KURTZ, S. R.-ALLERMAN, A. A.-JONES, E. D.-GEE, J. M.-BANAS, J. J.-HAMMONS, B. E. : InGaAsN Solar Cells with 1.0 eV Band Gap, Lattice Matched to GaAs, Applied Physics Letters 74 No. 5 (1999), 729-731.10.1063/1.123105
    Search in Google Scholar
  4. [4] PUCICKI, D.-BIELAK, K.-KUDRAWIEC, R.-RADZIEWICZ, D.-´SCIANA, B. : Determination of Indium and Nitrogen Contents of InGaAsN Quantum Wells by HRXRD Study Supported by BAC Calculation of The Measured Energy Gap, Materials Science-Poland 31 No. 4 (2013), 489-494..10.2478/s13536-013-0137-1
    Search in Google Scholar
  5. [5] LI, W.-PESSA, M.-LIKONEN, J. : Lattice Parameter in GaNAs Epilayerson GaAs: Deviation from Vegard’s Law, Applied Physics Letters 78 No. 19 (2001), 2864-2866.10.1063/1.1370549
    Search in Google Scholar
  6. [6] ALBO, A.-CYTERMANN, C.-BAHIR, G.-FEKETE, D. : Utilizing The Interface Adsorption of Nitrogen or The Growth of High-Quality GaInAsN/GaAs Quantum Wells by Metal Organic Chemical Vapour Deposition for Near Infrared Applications, Applied Physics Letters 96 (2010), 141102.10.1063/1.3360216
    Search in Google Scholar
  7. [7] PUCICKI, D.-BIELAK, K.-CIANA, B.-RADZIEWICZ. D.-LATKOWSKA, M.-KOV´A ˇC , J.-VINCZE, A.-TLACZALA, M. : Determination of Composition of Non-Homogeneous GaInNAs Layers, In press.
    Search in Google Scholar
DOI: https://doi.org/10.2478/jee-2014-0048 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
Journal RSS Feed
Language: English
Page range: 299 - 303
Submitted on: Jun 15, 2014
Published on: Nov 5, 2014
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
dilute nitrides,
GaInNAs,
composition determination,
HRXRD
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2014 Damian Pucicki, Katarzyna Bielak, Beata Ściana, Wojciech Dawidowski, Karolina Żelazna, Jarosław Serafińczuk, Jaroslav Kováč, Andrej Vincze, Łukasz Gelczuk, Piotr Dłużewski, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 65 (2014): Issue 5 (September 2014)
Previous article
Next article