Correlation of Selected Problems During Gan Movpe Epitaxy on si Substrates with in–Situ Interferometer Observation

.blurhash-client-img { display: none !important; }

Open Access

|Nov 2014

References

[1] DADGAR, A.-STRITTMATTER, A.-BL¨ASING, J.-PO- SCHENRIEDER, M.-CONTRERAS, O.-VEIT, P.-RIE- MANN, T.-BERTRAM, F.-REIHER, A.-KRTSCHIL, A.- DIEZ, A.-HEMPEL, T.-FINGER, T.-KASIC, A.-SCHU- BERT, M.-BIMBERG, D.-PONCE, F. A.-CHRISTEN, J. : Metalorganic Chemical Vapor Phase Epitaxy of Gallium-Nitride on Silicon, Phys. Stat. Sol.(c) 0 No. 6 (2003), 1583-1606.10.1002/pssc.200303122
Search in Google Scholar
[2] KAISER, U.-BROWN, P. D.-KHODOS, I.-HUMPHREYS, C. J.-SCHENK, H. P. D.-RICHTER, W. : The Effect of Growth Condition on the Structure of 2H-AlN Films Deposited on Si(111) by Plasma-Assisted Molecular Beam Epitaxy, J. Mater. Res. 14 (1999), 2036-2042.10.1557/JMR.1999.0275
Search in Google Scholar
[3] SZYMANSKI, T.-WOSKO, M.-PASZKIEWICZ, B.-PA- SZKIEWICZ, R. : The Influence of MOVPE Process Parameters on the Buffer Resistivity used in AlGaN/GaN Heterostructures, Proc. of SPIE 8902 (2013), 89022D-1-89022D-9.10.1117/12.2031051
Search in Google Scholar

DOI: https://doi.org/10.2478/jee-2014-0047 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632

Language: English

Page range: 294 - 298

Submitted on: Jun 15, 2014

Published on: Nov 5, 2014

In partnership with: Paradigm Publishing Services

Publication frequency: 6 issues per year

Keywords:

Related subjects:

© 2014 Tomasz Szymański, Mateusz Wośko, Bogdan Paszkiewicz, Kornelia Indykiewicz, Regina Paszkiewicz, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.