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Correlation of Selected Problems During Gan Movpe Epitaxy on si Substrates with in–Situ Interferometer Observation Cover

Correlation of Selected Problems During Gan Movpe Epitaxy on si Substrates with in–Situ Interferometer Observation

Journal of Electrical Engineering
Volume 65 (2014): Issue 5 (September 2014)
By: Tomasz Szymański,  Mateusz Wośko,  Bogdan Paszkiewicz,  Kornelia Indykiewicz and  Regina Paszkiewicz  
Open Access
|Nov 2014

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DOI: https://doi.org/10.2478/jee-2014-0047 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 294 - 298
Submitted on: Jun 15, 2014
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Published on: Nov 5, 2014
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
Gallium nitride,
GaN on Si,
MOVPE,
transition AlGaN,
in-situ observation
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2014 Tomasz Szymański, Mateusz Wośko, Bogdan Paszkiewicz, Kornelia Indykiewicz, Regina Paszkiewicz, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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